Abstract: A semiconductor memory device may include: a first group of pillars having diameters which are gradually increased toward the a first side; and interlayer insulating layers and conductive patterns surrounding the pillars of the first group, the interlayer insulating layers and conductive patterns being alternately stacked.

Abstract: A method for fabricating an image sensor. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a first photoresist pattern as a mask; forming a metal layer on the first photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the first photoresist pattern, and the sacrificial oxide layer; forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film; and forming contact holes and forming an edge open part by etching the interlayer insulating film using a second photoresist pattern as a mask.

Abstract: Provided is an image sensor. In the image sensor, a transistor region is on a substrate, and a photo diode region is at one side of the transistor region. A dielectric layer is formed on the transistor region and the photo diode region. A metal line is formed on the dielectric layer in the transistor region. A color filter is formed on the dielectric layer in the photo diode region.

Abstract: Disclosed are an image sensor and a method for fabricating the same. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a photoresist pattern as a mask; forming a metal layer on the photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the photoresist pattern, and at least a portion of the sacrificial oxide layer; and forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film.