Patents by Inventor SUN-GYU CHOI

SUN-GYU CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230186791
    Abstract: Disclosed is a real-scale landslide simulator for earthquake reproduction comprising: a base; a tower provided in one end of the base; a multi-stage simulation soil box provided movably in the vertical direction along the tower and filled with soil, which is subjected to compaction; a movable bogie provided movably in the horizontal direction on the upper surface of the base while supporting the other side of the multi-stage simulation soil box; a vertical reciprocator that reciprocates the multi-stage simulation soil box in the vertical direction; and a horizontal reciprocator that reciprocates the movable bogie in the horizontal direction. It is possible to reproduce liquefaction and shear strength reduction caused by an earthquake and analyze a real-scale landslide mechanism caused by an earthquake by repeatedly providing vertical and horizontal vibrations to the soil and forming a groundwater level using the groundwater simulation device.
    Type: Application
    Filed: December 6, 2022
    Publication date: June 15, 2023
    Inventors: Min Su JUNG, Jae Wook SEOK, Hyang Seon JEONG, Sun Gyu CHOI, Hyo Sung SONG
  • Patent number: 9929252
    Abstract: A method of forming a thin film includes forming an interface layer stack on a semiconductor substrate. Forming the interface layer stack may include performing a first surface treatment on the semiconductor substrate under a reducing atmosphere. Forming the interface layer stack may include performing a second surface treatment on the semiconductor substrate. The first surface treatment may be performed under a reducing atmosphere and the second surface treatment may be performed under a nitridation atmosphere. The first surface treatment may include forming a lower interface layer on a surface of the semiconductor substrate and the second surface treatment may include forming an upper interface layer. The first surface treatment may include selectively removing at least one oxide material from a native oxide film on the semiconductor substrate.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: March 27, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sun-gyu Choi, Sang-jin Hyun, Taek-soo Jeon, Hoon-joo Na, Young-suk Chai
  • Publication number: 20160314963
    Abstract: A method of forming a thin film includes forming an interface layer stack on a semiconductor substrate. Forming the interface layer stack may include performing a first surface treatment on the semiconductor substrate under a reducing atmosphere. Forming the interface layer stack may include performing a second surface treatment on the semiconductor substrate. The first surface treatment may be performed under a reducing atmosphere and the second surface treatment may be performed under a nitridation atmosphere. The first surface treatment may include forming a lower interface layer on a surface of the semiconductor substrate and the second surface treatment may include forming an upper interface layer. The first surface treatment may include selectively removing at least one oxide material from a native oxide film on the semiconductor substrate.
    Type: Application
    Filed: April 20, 2016
    Publication date: October 27, 2016
    Inventors: SUN-GYU CHOI, Sang-jin HYUN, Taek-soo JEON, Hoon-joo NA, Young-suk CHAI