Patents by Inventor Sun-gyung HWANG
Sun-gyung HWANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220301628Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.Type: ApplicationFiled: June 7, 2022Publication date: September 22, 2022Inventors: Won-bo SHIM, Ji-ho CHO, Yong-seok KIM, Byoung-taek KIM, Sun-gyung HWANG
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Patent number: 11355195Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.Type: GrantFiled: April 1, 2021Date of Patent: June 7, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won-bo Shim, Ji-ho Cho, Yong-seok Kim, Byoung-taek Kim, Sun-gyung Hwang
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Publication number: 20210217477Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.Type: ApplicationFiled: April 1, 2021Publication date: July 15, 2021Inventors: Won-bo SHIM, Ji-ho CHO, Yong-seok KIM, Byoung-taek KIM, Sun-gyung HWANG
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Patent number: 10971232Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.Type: GrantFiled: August 28, 2019Date of Patent: April 6, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won-bo Shim, Ji-ho Cho, Yong-seok Kim, Byoung-taek Kim, Sun-gyung Hwang
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Patent number: 10685708Abstract: A semiconductor device includes a substrate having a volatile memory region and a non-volatile memory region. The volatile memory region includes a cell capacitor disposed in the substrate and a cell transistor connected to the cell capacitor. The non-volatile memory region includes a plurality of non-volatile memory cells disposed on the substrate. The volatile memory region and the non-volatile memory region are disposed side by side.Type: GrantFiled: August 9, 2018Date of Patent: June 16, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Chang Hoon Jeon, Yoo Cheol Shin, Jun Hee Lim, Sung Kweon Baek, Chan Ho Lee, Won Chul Jang, Sun Gyung Hwang
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Publication number: 20190392902Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.Type: ApplicationFiled: August 28, 2019Publication date: December 26, 2019Inventors: Won-bo SHIM, Ji-ho CHO, Yong-seok KIM, Byoung-taek KIM, Sun-gyung HWANG
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Patent number: 10424381Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.Type: GrantFiled: January 14, 2018Date of Patent: September 24, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won-bo Shim, Ji-ho Cho, Yong-seok Kim, Byoung-taek Kim, Sun-gyung Hwang
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Publication number: 20190267088Abstract: A semiconductor device includes a substrate having a volatile memory region and a non-volatile memory region. The volatile memory region includes a cell capacitor disposed in the substrate and a cell transistor connected to the cell capacitor. The non-volatile memory region includes a plurality of non-volatile memory cells disposed on the substrate. The volatile memory region and the non-volatile memory region are disposed side by side.Type: ApplicationFiled: August 9, 2018Publication date: August 29, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Chang Hoon JEON, Yoo Cheol Shin, Jun Hee Lim, Sung Kweon Baek, Chan Ho Lee, Won Chul Jang, Sun Gyung Hwang
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Patent number: 10304541Abstract: A memory device includes a memory cell array including a first switch cell, a second switch cell, and a plurality of memory cells disposed between the first the second switch cells and connected to a plurality of word lines, and a control circuit configured to perform a program operation by providing a program voltage to a first word line among the plurality of word lines, a switch voltage to a second word line among the plurality of word lines, and a pass voltage to remaining word lines among the plurality of word lines, wherein the control circuit is configured to turn off the first switch cell and the second switch cell in a first section of the program operation, and configured to turn on the first switch cell and increase the switch voltage in a second section of the program operation later than the first section.Type: GrantFiled: January 26, 2018Date of Patent: May 28, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun Gyung Hwang, Byoung Taek Kim, Yong Seok Kim, Ju Seok Lee
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Publication number: 20180374540Abstract: A memory device includes a memory cell array including a first switch cell, a second switch cell, and a plurality of memory cells disposed between the first the second switch cells and connected to a plurality of word lines, and a control circuit configured to perform a program operation by providing a program voltage to a first word line among the plurality of word lines, a switch voltage to a second word line among the plurality of word lines, and a pass voltage to remaining word lines among the plurality of word lines, wherein the control circuit is configured to turn off the first switch cell and the second switch cell in a first section of the program operation, and configured to turn on the first switch cell and increase the switch voltage in a second section of the program operation later than the first section.Type: ApplicationFiled: January 26, 2018Publication date: December 27, 2018Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun Gyung HWANG, Byoung Taek KIM, Yong Seok KIM, Ju Seok LEE
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Publication number: 20180268907Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.Type: ApplicationFiled: January 14, 2018Publication date: September 20, 2018Inventors: Won-bo SHIM, Ji-ho CHO, Yong-seok KIM, Byoung-taek KIM, Sun-gyung HWANG