Abstract: An oscillating signal generating circuit drives an oscillating signal to a first logic level based on a first control signal, which is generated by delaying the oscillating signal through a clock delaying circuit, and drives the oscillating signal to a second logic level based on a second control signal, which is generated by delaying the oscillating signal by a fixed delay amount.

Abstract: The present invention relates to a novel enzyme capable of producing multi-hydroxy derivatives from polyunsaturated fatty acids and a method for producing multi-hydroxy derivatives of polyunsaturated fatty acids using the same.

Abstract: An oscillating signal generating circuit drives an oscillating signal to a first logic level based on a first control signal, which is generated by delaying the oscillating signal through a clock delaying circuit, and drives the oscillating signal to a second logic level based on a second control signal, which is generated by delaying the oscillating signal by a fixed delay amount.

Abstract: An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.

Abstract: A light-emitting diode (LED) lamp for a vehicle and a method of manufacturing the same use MID and magnetic induction technologies. The LED lamp includes a LED module, a housing accommodating the LED module, and a molded interconnect device (MID) electrode formed on a surface of the housing. The LED module may be mounted on the MID electrode by soldering using magnetic induction heating, the housing may be an injection molded product, and the MID electrode may be formed on the housing using a MID process.

Abstract: An ICS repeater usable in a wireless network and, more specifically, a method for effectively canceling only an interference signal by selectively using an autocorrelation canceller in an ICS repeater are described. According to one aspect, a method for canceling interference performed by a 5G ICS repeater may comprise obtaining a first error signal by removing a first predicted feedback signal from a first original signal received through a reception antenna; generating a first delay signal by delaying the first error signal; determining whether the first original signal is a null signal based on magnitude information of the first error signal; determining a first reference signal based on the first delay signal according to a determination result of whether the first original signal is a null signal; and generating a second predicted feedback signal based on the first reference signal.

Abstract: The present disclosure provides a computerized method item correlation including: receiving an indication of an order comprising at least one item; determining if the order is urgent based on an amount of time remaining until the items must ship to a customer; determining a location of each of a plurality of pickers; iteratively, for items in the order: identifying a picker closest to the item, the picker having a current job priority; correlating the closest picker and the item in a data structure; re-correlating, in the data structure, at least one item previously correlated with the closest picker to an alternate picker in response to the current job priority not being urgent; sending, to a user device of the closest picker, a location and item identifier associated with the item; and storing, in the data structure, a completion flag in correlation with the item upon receipt of an item-complete message.

Abstract: An image sensing device includes a semiconductor substrate, a plurality of photoelectric conversion elements supported by the semiconductor substrate, each photoelectric conversion elements configured to generate an electrical signal corresponding to incident light by performing a photoelectric conversion of the incident light, a plurality of color filters disposed over the semiconductor substrate to filter incident light to be received by the photoelectric conversion elements, each color filter configured to allow light having a specific color to pass therethrough, and a grid structure disposed between the color filters and structured to include asymmetric sidewalls that are shaped based on colors of adjacent color filters.

Abstract: An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: An image sensing device is provided to include a substrate layer structured to include a plurality of photoelectric conversion that respond to incident light to generate electrons, and a plurality of floating diffusion regions coupled to the plurality of photoelectric conversion regions, respectively, and structured to store the electrons generated by the plurality of photoelectric conversion regions, respectively; a first dielectric layer disposed over the substrate layer; and a second dielectric layer disposed over the first dielectric layer, and configured to include a plurality of metal lines and a pixel transistor. The pixel transistor includes a gate electrode configured to receive a control signal for the pixel transistor; a channel region formed under the gate electrode; and an insulation layer between the gate electrode and the channel region to isolate the gate electrode and the channel region from each other, and isolate adjacent metal lines from each other.

Abstract: An image sensing device includes a semiconductor substrate, a plurality of photoelectric conversion elements supported by the semiconductor substrate, each photoelectric conversion elements configured to generate an electrical signal corresponding to incident light by performing a photoelectric conversion of the incident light, a plurality of color filters disposed over the semiconductor substrate to filter incident light to be received by the photoelectric conversion elements, each color filter configured to allow light having a specific color to pass therethrough, and a grid structure disposed between the color filters and structured to include asymmetric sidewalls that are shaped based on colors of adjacent color filters.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: An image sensor may include a photosensing region in a substrate and configured to generate photoelectrons in response to an incident light on the photodiode region, conductive bias patterns disposed to be spaced apart from one another and surrounding the photosensing region, and pixel isolation patterns that are spaced apart from and disposed in a periphery of the conductive bias patterns.

Abstract: An image sensor is disclosed. The image sensor may include a photosensing region in a substrate and configured to generate photoelectrons in response to incident light on the photosensing region; bias patterns arranged to surround the photosensing region and including a conductive material; a floating diffusion region at a center of the photosensing region to store photoelectrons generated by the photosensing region; and transfer gates that partially overlap with the floating diffusion region and are operable to transfer photoelectrons generated by the photosensing region to the floating diffusion region. The photosensing region and the bias patterns are electrically isolated from one another.

Abstract: An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

Abstract: An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.

Abstract: An image sensor may include a photosensing region in a substrate and configured to generate photoelectrons in response to an incident light on the photodiode region, conductive bias patterns disposed to be spaced apart from one another and surrounding the photosensing region, and pixel isolation patterns that are spaced apart from and disposed in a periphery of the conductive bias patterns.

Abstract: An image sensor is disclosed. The image sensor may include a photosensing region in a substrate and configured to generate photoelectrons in response to incident light on the photosensing region; bias patterns arranged to surround the photosensing region and including a conductive material; a floating diffusion region at a center of the photosensing region to store photoelectrons generated by the photosensing region; and transfer gates that partially overlap with the floating diffusion region and are operable to transfer photoelectrons generated by the photosensing region to the floating diffusion region. The photosensing region and the bias patterns are electrically isolated from one another.