Patents by Inventor Sun-Hoi Goh

Sun-Hoi Goh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING SEMICONDUCTOR DEVICE
    Publication number: 20180350663
    Abstract: The present invention provides a method of forming a semiconductor device including the following steps. First of all, a dielectric layer is formed, and a helium plasma treatment is performed on the dielectric layer. Next, an acid cleaning process is performed on a surface of the dielectric layer after performing the helium plasma treatment. Then, an alkaline brushing process is performed on the surface.
    Type: Application
    Filed: June 1, 2017
    Publication date: December 6, 2018
    Inventors: WEI ZHANG, SUN HOI GOH, Zhao Yang Ma
  • Method for forming semiconductor structure
    Patent number: 9029265
    Abstract: A method for forming a semiconductor structure. A dielectric layer including adjacent first and second dielectric regions is formed on a substrate. The dielectric layer includes a curable material. The first dielectric region is cured. A portion of the second dielectric region is etched to form an opening and leave a remaining portion of the second dielectric region. After the etching step, the remaining portion of the second dielectric region is cured.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: May 12, 2015
    Assignee: United Microelectronics Corp.
    Inventors: Sun-Hoi Goh, Seng-Wah Liau, Zhen-Zhen Wang
  • METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
    Publication number: 20150104943
    Abstract: A method for forming a semiconductor structure. A dielectric layer including adjacent first and second dielectric regions is formed on a substrate. The dielectric layer includes a curable material. The first dielectric region is cured. A portion of the second dielectric region is etched to form an opening and leave a remaining portion of the second dielectric region. After the etching step, the remaining portion of the second dielectric region is cured.
    Type: Application
    Filed: October 15, 2013
    Publication date: April 16, 2015
    Applicant: United Microelectronics Corp.
    Inventors: Sun-Hoi Goh, Seng-Wah Liau, Zhen-Zhen Wang