Abstract: A system and method for determining a respective carrier status of an individual is provided. In one implementation, a method includes training a neural network model based on predetermined information related to at least one genetic variant and determining the respective carrier status based on a normalized read depth for the gene in a genome of the individual and allele dosage data for the gene using a machine learning algorithm. The method is configured to receive, as inputs, the normalized read depth and allele dosage data, and output the respective carrier status of the individual for the at least one genetic variant. In another implementation a system includes a recurrent neural network. The recurrent neural network includes a plurality of long short-term memory (LSTM) network cells linked sequentially in the recurrent neural network, a plurality of layers of long short-term memory (LSTM) network cells; and a fully connected sigmoid module.

Abstract: A system and method for determining a respective carrier status of an individual is provided. In one implementation, a method includes training a neural network model based on predetermined information related to at least one genetic variant and determining the respective carrier status based on a normalized read depth for the gene in a genome of the individual and allele dosage data for the gene using a machine learning algorithm. The method is configured to receive, as inputs, the normalized read depth and allele dosage data, and output the respective carrier status of the individual for the at least one genetic variant. In another implementation a system includes a recurrent neural network. The recurrent neural network includes a plurality of long short-term memory (LSTM) network cells linked sequentially in the recurrent neural network, a plurality of layers of long short-term memory (LSTM) network cells; and a fully connected sigmoid module.

Abstract: A method for forming a semiconductor device includes forming a buried doped layer in a semiconductor substrate and forming a plurality of first trenches that expose the buried doped layer. A first dielectric layer is formed covering sidewalls of the first trenches, and a doped polysilicon layer is formed covering side surfaces of the first dielectric layer and bottom portions of the first trenches. The method also includes forming a second trench in each of the plurality of first trenches, each second trench extending through a bottom portion of the doped polysilicon layer and the buried doped layer into a lower portion of the substrate. The method also includes forming a second dielectric layer inside each second trench. An isolation pocket structure is formed that includes the doped buried layer at the bottom and sidewalls that includes the doped polysilicon layer sandwiched between the first and second dielectric layers.

Abstract: The present invention provides compositions and methods for predicting the hypoxia response in tumor cells, methods for predicting the likelihood of cancer metastasis, and methods for inhibiting tumor cell proliferation using a microRNA comprising miR-210.