Abstract: A wafer support assembly can include a wafer chuck including a first surface and a second surface, where the first surface can have a central region that is configured to hold a wafer during ion implantation into the wafer, and an edge region surrounding the central region beyond an edge of the wafer when held in the central region, and the second surface opposing the first surface. An edge mask structure can cover at least a portion of the edge region of the first surface, where the edge mask structure can have a mask body with an inclined side surface facing the central region.

Abstract: An arc lamp includes an arc tube configured to receive a reaction gas therein, and an anode and a cathode disposed opposite one another within the arc tube and configured to generate an electrical arc. The anode includes an anode head portion extending inwardly from an end portion of the arc tube, and an anode tip portion bonded to the anode head portion and comprising a trench extending in a top surface along a peripheral region of the anode tip portion.

Abstract: An arc lamp includes an arc tube configured to receive a reaction gas therein, and an anode and a cathode disposed opposite one another within the arc tube and configured to generate an electrical arc. The anode includes an anode head portion extending inwardly from an end portion of the arc tube, and an anode tip portion bonded to the anode head portion and comprising a trench extending in a top surface along a peripheral region of the anode tip portion.

Abstract: A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber.

Abstract: A substrate processing apparatus for deposition on a water seated therein is disclosed. The substrate processing apparatus includes a chamber having a reaction space, a lid provided on the chamber to selectively open or close the reaction space, a main disc accommodated in the chamber, on which at least one wafer is placed, and a drive device including a drive shaft to selectively rotate the main disc and a drive unit to drive the drive shaft. The drive shaft is separably coupled to the main disc to transmit drive force. When the lid is opened to expose the reaction space, the main disc is separated from the drive shaft and is discharged to the outside of the chamber in a state in which the wafer is placed thereon.

Abstract: Provided are a gas distribution apparatus and a substrate treating apparatus including the same. The substrate treating apparatus includes a chamber comprising a reaction space, a substrate seat unit disposed in the reaction space of the chamber to radially seat a plurality of substrates with respect to a center thereof, and a gas distribution device comprising a first gas distribution part configured to eject at least two source materials onto a substrate through routes different from each other and a second gas distribution part configured to eject a source material having a decomposition temperature greater than an average of decomposition temperatures of the at least two source materials onto the substrate. The first gas distribution part is divided into at least two sections and disposed such that the second gas distribution part is positioned therebetween; and couplable and separable to/from one another.

Abstract: A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber.