Abstract: A medium internal circulation enhanced thermal desorption soil remediation reactor and a method thereof, and belongs to the technical field of soil remediation. Internal circulation of a thermal medium is realized through a specially designed rotary drum structure, and a way for heating soil by utilizing oxidative decomposition of organic contaminants is provided, so that the treatment efficiency of an apparatus and the contaminant removal effect are improved significantly on the premise of not increasing the scale of the apparatus, and at the same time, the energy consumption of a system is reduced.

Abstract: A medium internal circulation enhanced thermal desorption soil remediation reactor and a method thereof, and belongs to the technical field of soil remediation. Internal circulation of a thermal medium is realized through a specially designed rotary drum structure, and a way for heating soil by utilizing oxidative decomposition of organic contaminants is provided, so that the treatment efficiency of an apparatus and the contaminant removal effect are improved significantly on the premise of not increasing the scale of the apparatus, and at the same time, the energy consumption of a system is reduced.

Abstract: A heat pipe-enhanced heat accumulation type indirect thermal desorption-based soil remediation device and method. On the one hand, by using thermal desorption gas generated by soil through heating and volatilizing as a heat transfer medium and by a circular heating manner, hot air efficiently transfers heat to the soil by contact, the treatment capacity of equipment is high. Moreover, high-temperature flue gas is kept from direct contact with the soil, so the high-temperature flue gas is prevented from being mixed with gaseous organic contaminants. Therefore, only a small amount of excess gas needs to be purified, so the equipment scale is small. On the other hand, by equipping a reactor with heat pipes and a ceramic heat accumulator, a second soil heating manner is provided, so that the heat transfer capacity per unit volume of the reactor is increased, and the treatment efficiency is significantly improved under the same scale.

Abstract: The interface between a trench isolation layer and a semiconductor substrate at the uppermost part of the trench isolation region has a curvilinear sectional profile to prevent an electric field from concentrating at the upper corners of the substrate where the active regions are formed. A pad oxide layer and a hard mask layer are sequentially formed on the semiconductor substrate, and are then patterned using photolithography to form a hard mask pattern and a pad oxide pattern. Subsequently, a thermal oxide layer is formed on the substrate, either directly thereon or in a shallow trench formed therein. The thermal oxide layer and the semiconductor substrate are then etched using the hard mask pattern as a mask to form a deep trench and yet leave an outer peripheral portion of the thermal oxide layer at the upper part of the trench isolation region. A buffer layer is formed over the entire upper stepped surface of the resulting structure and then the deep trench is filled with an oxide layer.