Patents by Inventor Sun-Hwa JUNG

Sun-Hwa JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11967462
    Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.
    Type: Grant
    Filed: October 12, 2021
    Date of Patent: April 23, 2024
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Yun Sung Kang, Su Yeon Lee, Won Jun Na, Byung Kun Kim, Yu Hong Oh, Sun Hwa Kim, Jae Eun Heo, Hoe Chul Jung
  • Patent number: 11296276
    Abstract: Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: April 5, 2022
    Assignee: Industry-University Cooperation Foundation Hanyang University
    Inventors: Jea Gun Park, Jong Ung Baek, Kei Ashiba, Jin Young Choi, Mi Ri Park, Hyun Gyu Lee, Han Sol Jun, Sun Hwa Jung
  • Publication number: 20210135091
    Abstract: Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.
    Type: Application
    Filed: November 19, 2019
    Publication date: May 6, 2021
    Applicant: Industry-University Cooperation Foundation Hanyang University
    Inventors: Jea Gun PARK, Jong Ung BAEK, Kei ASHIBA, Jin Young CHOI, Mi Ri PARK, Hyun Gyu LEE, Han Sol JUN, Sun Hwa JUNG
  • Patent number: 10104024
    Abstract: A method, performed by a user review providing system, of providing user reviews includes acquiring, from a first user terminal, location information specifying an area on a map, and providing review posts to the first user terminal by classifying the review posts according to points-of-interest (POIs), the review posts being written by a plurality of users to include information about a POI included in an area specified by the location information and posted on a personal webpage of a writer.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: October 16, 2018
    Assignee: NAVER Corporation
    Inventors: Jina Hong, Sun Hwa Jung, U Jae Kim
  • Patent number: 9823067
    Abstract: A method of calculating, using a depth sensor, a distance excluding an ambiguity distance including outputting a modulated light signal output from a light source to an object, receiving the modulated light signal reflected by the object, calculating a distance between the light source and the object using the reflected modulated light signal input to photo gates in conjunction with demodulation signals supplied to the photo gates, the calculating including calculating, using the modulated light signal, at least one distance farther than a maximum measurable distance, and setting the at least one distance to be equal to the maximum measurable distance may be provided. A range of the distance farther than the maximum measurable distance can be determined according to a duty ratio of the modulated light signal.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: November 21, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong Ki Min, Wang Hyun Kim, Sun Hwa Jung, Tae Chan Kim, Hye Kyoung Jung
  • Publication number: 20160337275
    Abstract: A method, performed by a user review providing system, of providing user reviews includes acquiring, from a first user terminal, location information specifying an area on a map, and providing review posts to the first user terminal by classifying the review posts according to points-of-interest (POIs), the review posts being written by a plurality of users to include information about a POI included in an area specified by the location information and posted on a personal webpage of a writer.
    Type: Application
    Filed: May 11, 2016
    Publication date: November 17, 2016
    Inventors: Jina Hong, Sun Hwa Jung, U Jae Kim
  • Publication number: 20150070684
    Abstract: A method of calculating, using a depth sensor, a distance excluding an ambiguity distance including outputting a modulated light signal output from a light source to an object, receiving the modulated light signal reflected by the object, calculating a distance between the light source and the object using the reflected modulated light signal input to photo gates in conjunction with demodulation signals supplied to the photo gates, the calculating including calculating, using the modulated light signal, at least one distance farther than a maximum measurable distance, and setting the at least one distance to be equal to the maximum measurable distance may be provided. A range of the distance farther than the maximum measurable distance can be determined according to a duty ratio of the modulated light signal.
    Type: Application
    Filed: July 31, 2014
    Publication date: March 12, 2015
    Inventors: Dong Ki MIN, Wang Hyun KIM, Sun Hwa JUNG, Tae Chan KIM, Hye Kyoung JUNG
  • Publication number: 20090218696
    Abstract: A semiconductor device includes bit lines formed over a substrate and a padding unit formed over the bit lines. The padding unit includes stacked padding layers. A lower padding layer is formed between the bit lines and an upper padding layer. The upper layer as a slit formed therein. The lower padding layer prevents damage to the bit lines due to plasma gas entering through the slit.
    Type: Application
    Filed: February 27, 2009
    Publication date: September 3, 2009
    Applicant: Hynix Semiconductor Inc.
    Inventors: Sun-Hwa JUNG, Wan-Cheul Shin