Abstract: A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).

Abstract: The present invention relates to an antigen-binding molecule comprising a heavy chain variable region comprising a heavy-chain complementarity-determining region 1 (HCDR1) comprising an amino acid sequence represented by Sequence No. 1, an HCDR2 comprising an amino acid sequence represented by Sequence No. 2, and an HCDR3 comprising an amino acid sequence represented by Sequence No. 3; a light-chain variable region comprising a light-chain complementarity-determining region 1 (LCDR1) comprising an amino acid sequence represented by Sequence No. 4, an LCDR2 comprising an amino acid sequence represented by Sequence No. 5, and an LCDR3 comprising an amino acid sequence represented by Sequence No. 6; wherein the antigen-binding molecule is a T cell receptor (TCR); and to a cell line expressing the same.

Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.

Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.

Abstract: Provided are compounds for inhibiting Snail-p53 binding and therapeutic agents for cancer including the compounds as an effective component. The Snail-p53 binding inhibitors induce expression of p53 in K-Ras mutant cell lines, thereby enabling effective treatment or prevention of K-Ras mutant cancer, such as, pancreatic cancer, lung cancer, cholangioma, and colon cancer, of which diagnosis or treatment is not easy.

Abstract: An organic light emitting device including: a first electrode, a hole injection layer on the first electrode, a hole transport layer on the hole injection layer, an organic light emitting layer on the hole transport layer, a first electron transport layer on the organic light emitting layer, a second electron transport layer on the organic light emitting layer, an electron injection layer on the second electron transport layer and a second electrode on the electron injection layer, where the first electron transport layer includes a first material for improving a thermal stability, a second material for improving a luminous efficiency and a third material for reducing a driving voltage, and the second electron transport layer is laminated with the first electron transport layer, and the second electrode faces the first electrode.

Abstract: Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.

Abstract: An organic light emitting device including: a first electrode, a hole injection layer on the first electrode, a hole transport layer on the hole injection layer, an organic light emitting layer on the hole transport layer, a first electron transport layer on the organic light emitting layer, a second electron transport layer on the organic light emitting layer, an electron injection layer on the second electron transport layer and a second electrode on the electron injection layer, where the first electron transport layer includes a first material for improving a thermal stability, a second material for improving a luminous efficiency and a third material for reducing a driving voltage, and the second electron transport layer is laminated with the first electron transport layer, and the second electrode faces the first electrode.

Abstract: Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.

Abstract: Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.

Abstract: Provided are compounds for inhibiting Snail-p53 binding and therapeutic agents for cancer including the compounds as an effective component. The Snail-p53 binding inhibitors induce expression of p53 in K-Ras mutant cell lines, thereby enabling effective treatment or prevention of K-Ras mutant cancer, such as, pancreatic cancer, lung cancer, cholangioma, and colon cancer, of which diagnosis or treatment is not easy.

Abstract: A semiconductor package apparatus includes a first semiconductor package including a first semiconductor chip, a first substrate, a first terminal, and a first signal transfer medium, and a second semiconductor package including a second semiconductor chip, a second substrate, a second terminal, and a second signal transfer medium. At least one package connecting solder ball is located between the first terminal and the second terminal. A first solder ball guide member is positioned around the first terminal of the first substrate and includes a first guide surface for guiding a shape of the package connecting solder ball.

Abstract: According to example embodiments, a semiconductor package includes a first semiconductor chip is on a first substrate, a protective layer directly on the first semiconductor chip, and an encapsulant covering an upper surface of the first substrate. The encapsulant may contact side surfaces of the first semiconductor chip and the protective layer.

Abstract: Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.

Abstract: A semiconductor package apparatus includes a first semiconductor package including a first semiconductor chip, a first substrate, a first terminal, and a first signal transfer medium, and a second semiconductor package including a second semiconductor chip, a second substrate, a second terminal, and a second signal transfer medium. At least one package connecting solder ball is located between the first terminal and the second terminal. A first solder ball guide member is positioned around the first terminal of the first substrate and includes a first guide surface for guiding a shape of the package connecting solder ball.

Abstract: Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.

Abstract: Provided are compounds for inhibiting Snail-p53 binding and therapeutic agents for cancer including the compounds as an effective component. The Snail-p53 binding inhibitors induce expression of p53 in K-Ras mutant cell lines, thereby enabling effective treatment or prevention of K-Ras mutant cancer, such as, pancreatic cancer, lung cancer, cholangioma, and colon cancer, of which diagnosis or treatment is not easy.

Abstract: A multi-chip package may include a first semiconductor package, a second semiconductor package and an interposer chip. The second semiconductor package may be arranged over the first semiconductor package. The interposer chip may be interposed between the first semiconductor package and the second semiconductor package. The interposer chip may have a receiving groove configured to receive the first semiconductor package. Thus, electrical connection reliability between the first semiconductor package and the second semiconductor package may be improved under a condition that the connecting terminals may have small sizes.

Abstract: Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.