Patents by Inventor Sun-II Shim

Sun-II Shim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110198685
    Abstract: Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.
    Type: Application
    Filed: April 27, 2011
    Publication date: August 18, 2011
    Inventors: Hyun-Suk Kim, Sun-II Shim, Chang-Seok Kang, Won-Cheol Jeong, Jung-Dal Choi, Jae-Kwan Park, Seung-Hyun Lim, Sun-Jung Kim
  • Publication number: 20090159962
    Abstract: Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.
    Type: Application
    Filed: December 18, 2008
    Publication date: June 25, 2009
    Inventors: Hyun Suk Kim, Sun-II Shim, Chang-Seok Kang, Won-Cheol Jeong, Jung-Dal Choi, Jae-Kwan Park, Seung-Hyun Lim, Sun-Jung Kim