Abstract: Provided are a noble metal-transition metal complex catalyst supported on a carbon-coated silica-alumina support and a preparation method therefor, the catalyst being capable of obtaining a fast reaction rate and catalyst stability, as compared to a conventional catalyst, when cyclohexane dimethanol (CHDM) production is carried out by a cyclohexane dicarboxylic acid (CHDA) hydrogenation reaction in an aqueous solution by using a carbon-coated supported catalyst.

Abstract: An indoor live ammunition shooting range facility system includes a ventilation facility installed in an indoor live ammunition shooting range, and configured to ventilate air of the indoor live ammunition shooting range; a targeting device facility installed in the indoor live ammunition shooting range, and configured to provide a shooting target; a bulletproof facility installed to protect components exposed to an inside of the indoor live ammunition shooting range among components configuring the ventilation facility and the target device facility and to protect a wall surface of the indoor live ammunition shooting range; a bullet head recovery facility installed on a side opposite to a shooting position, and configured to recover a bullet head; and a control facility installed in the indoor live ammunition shooting range, and configured to control the ventilation facility, the target device facility and the bullet head recovery facility.

Abstract: Provided is a semiconductor package. The semiconductor package includes an image sensor chip including a first surface and a second surface opposite to each other in a first direction; a transparent substrate spaced apart from the second surface of the image sensor chip in a second direction, wherein the transparent substrate includes a first part and a second part with a width different from the first part; an adhesive layer disposed between the second surface of the image sensor chip and the first part of the transparent substrate; and a mold layer on the second part of the transparent substrate, wherein the mold layer comprises side surfaces that extend along the first part of the transparent substrate, and further extend along side surfaces of the adhesive layer and side surfaces of the image sensor chip, and not extending along the first surface of the image sensor chip.

Abstract: The present invention relates to a novel organic compound and an organic light emitting device including the same, and more specifically provides an organic electroluminescent device with remarkably improved light emitting efficiency and service life.

Abstract: A method for establishing a plurality of protocol data unit (PDU) sessions between a user equipment (UE) and a data network (DN) by the UE may comprise transmitting a message to establish the plurality of PDU sessions to at least one network function (NF) of a plurality of NFs, exchanging a signal to establish the plurality of PDU sessions among the UE, a radio access network (RAN), and the plurality of NFs based on the message, and establishing the plurality of PDU sessions between the UE and the DN according to predetermined priority and based on the signal, wherein each of the plurality of PDU sessions corresponds to a network slice (NS) for a particular service, wherein the message includes information about the particular service corresponding to the plurality of PDU sessions, and wherein the priority is determined based on the information about the particular service.

Abstract: Provided are a silicon oxide-carbon composite, a method of preparing the same, and an energy storage device containing the same. In the method of preparing a silicon oxide-carbon composite, a reaction solution containing an organic solvent including an aromatic compound is provided. Crystalline carbon structures are formed by generating plasma in the reaction solution. A slurry is formed by adding silicon halide and a polyol in the reaction solution in which the crystalline carbon structures are dispersed. The slurry is separated from the organic solvent and subjected to thermal treatment.

Abstract: The present invention provides a bullet collecting box which is installed with a plurality of rubber plates in the bullet collecting box having a rectangular parallelepiped shape and filled with rubber powder filling materials having a particle size of 0.1 to 3 mm therein, thereby collecting the bullets fired in the indoor shooting range without damage, and a bullet collecting system which can be used by installing the bullet collecting box in the indoor shooting range. Also, the present invention provides a bullet collecting system for preventing occurrence of lead fume in the indoor shooting range, in which the beaten zone of the indoor shooting range is newly improved from an existing system of using an iron plate to a system of using powder filling materials, thereby preventing the leakage of lead fume, and contributing to an early normalization of the shooting range and a creative national defense.

Abstract: The present disclosure relates to a 5G or pre-5G communication system for supporting higher data transmission rates beyond 4G communication systems such as LTE systems.

Abstract: Provided are a silicon oxide-carbon composite, a method of preparing the same, and an energy storage device containing the same. In the method of preparing a silicon oxide-carbon composite, a reaction solution containing an organic solvent including an aromatic compound is provided. Crystalline carbon structures are formed by generating plasma in the reaction solution. A slurry is formed by adding silicon halide and a polyol in the reaction solution in which the crystalline carbon structures are dispersed. The slurry is separated from the organic solvent and subjected to thermal treatment.

Abstract: Provided are a silicon oxide-carbon composite, a method of preparing the same, and an energy storage device containing the same. In the method of preparing a silicon oxide-carbon composite, a reaction solution containing an organic solvent including an aromatic compound is provided. Crystalline carbon structures are formed by generating plasma in the reaction solution. A slurry is formed by adding silicon halide and a polyol in the reaction solution in which the crystalline carbon structures are dispersed. The slurry is separated from the organic solvent and subjected to thermal treatment.

Abstract: Provided are a carbon structure, a method of manufacturing the carbon structure, and an energy storage device having the carbon structure. According to the method of manufacturing the carbon structure, a reaction solution containing a catalyst and an organic solvent containing an aromatic compound is provided. Plasma is generated in the reaction solution, thereby forming a crystalline carbon structure.

Abstract: The present invention provides a bullet collecting box which is installed with a plurality of rubber plates in the bullet collecting box having a rectangular parallelepiped shape and filled with rubber powder filling materials having a particle size of 0.1 to 3 mm therein, thereby collecting the bullets fired in the indoor shooting range without damage, and a bullet collecting system which can be used by installing the bullet collecting box in the indoor shooting range. Also, the present invention provides a bullet collecting system for preventing occurrence of lead fume in the indoor shooting range, in which the beaten zone of the indoor shooting range is newly improved from an existing system of using an iron plate to a system of using powder filling materials, thereby preventing the leakage of lead fume, and contributing to an early normalization of the shooting range and a creative national defense.

Abstract: Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first FET and a second gate insulating film of the second FET have different leakage current characteristics or gate electric field characteristics.

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract: An integrated circuit packaging system, and a method of manufacture thereof, including: a substrate; a device attached on a top surface of the substrate; a mold encapsulating the device, the mold having a through via and a recessed pattern characterized by being formed in a single process; and a conductive via in the through via and a conductive pattern in the recessed pattern characterized by being formed in another single process.

Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Abstract: Provided are a silicon oxide-carbon composite, a method of preparing the same, and an energy storage device containing the same. In the method of preparing a silicon oxide-carbon composite, a reaction solution containing an organic solvent including an aromatic compound is provided. Crystalline carbon structures are formed by generating plasma in the reaction solution. A slurry is formed by adding silicon halide and a polyol in the reaction solution in which the crystalline carbon structures are dispersed. The slurry is separated from the organic solvent and subjected to thermal treatment.

Abstract: Provided are a carbon structure, a method of manufacturing the carbon structure, and an energy storage device having the carbon structure. According to the method of manufacturing the carbon structure, a reaction solution containing a catalyst and an organic solvent containing an aromatic compound is provided. Plasma is generated in the reaction solution, thereby forming a crystalline carbon structure.

Abstract: According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.