Abstract: The present disclosure relates to a power conversion device and a control method thereof and, more specifically, to a power conversion device which may protect a switching element when performing stopping of driving, and a control method thereof. A power conversion device according to an embodiment of the present disclosure comprises a pulse width modulation (PWM) controller for outputting, to a gate driver, a first pulse width modulation signal for controlling a first switching element, a second pulse width modulation signal for controlling a second switching element, a third pulse width modulation signal for controlling a third switching element, and a fourth pulse width modulation signal for controlling a fourth switching element.

Abstract: The present disclosure relates to a power conversion device and a control method thereof and, more specifically, to a power conversion device which may protect a switching element when performing stopping of driving, and a control method thereof. A power conversion device according to an embodiment of the present disclosure comprises a pulse width modulation (PWM) controller for outputting, to a gate driver, a first pulse width modulation signal for controlling a first switching element, a second pulse width modulation signal for controlling a second switching element, a third pulse width modulation signal for controlling a third switching element, and a fourth pulse width modulation signal for controlling a fourth switching element.

Abstract: The present invention relates to a photovoltaic inverter capable of reducing a leakage current and a switching loss by changing a pulse width modulation (PWM) method and a configuration of an output filter. To this end, the photovoltaic inverter includes a direct-current (DC) link capacitor connected in parallel to a photovoltaic module, a switch unit including first to fourth switches and operating by a half unipolar switching method, and a reactor having one end connected to another end of the first switch and one end of the second switch, and another end connected to a grid, the reactor having a predetermined inductance.

Abstract: A power semiconductor device may include: a first conductivity-type drift region in which a plurality of trench gates each including a gate insulating layer disposed on a surface thereof and a conductive material filling the interior thereof are disposed; a second conductivity-type body region disposed on an inner side of an upper portion of the drift region and disposed to be in contact with the trench gate; a first conductivity-type emitter region disposed on an inner side of an upper portion of the body region and disposed to be in contact with the trench gate; and a hole accumulation region disposed in the drift region, disposed below the body region, and disposed between the trench gates.

Abstract: A power semiconductor device may include: a first conductivity-type first semiconductor layer; a second conductivity-type second semiconductor layer disposed above the first semiconductor layer; and a heat dissipation trench disposed to penetrate from an upper surface of the second semiconductor layer into a portion of the second semiconductor layer and having an insulating layer disposed on a surface thereof.

Abstract: A diode device may include a first conductivity type first semiconductor region, a second conductivity type second semiconductor region partially formed inside an upper portion of the first semiconductor region, and second conductivity type third semiconductor regions partially formed inside the upper portion of the first semiconductor region, formed on sides of the second semiconductor region, and having an impurity concentration higher than that of the second semiconductor region.