Patents by Inventor Sun-Joong PARK

Sun-Joong PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device
    Patent number: 11744094
    Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: August 29, 2023
    Assignees: LG Display Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Kyu-Nam Kim, Duk-Young Jeon, Hyun-Jin Cho, Sun-Joong Park
  • QUANTUM-DOT LIGHT EMITTING DIODE, METHOD OF FABRICATING THE QUANTUM-DOT LIGHT EMITTING DIODE AND QUANTUM-DOT LIGHT EMITTING DISPLAY DEVICE
    Publication number: 20220376200
    Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.
    Type: Application
    Filed: July 28, 2022
    Publication date: November 24, 2022
    Applicants: LG DISPLAY CO., LTD., Korea Advanced Institute of Science and Technology
    Inventors: Kyu-Nam KIM, Duk-Young JEON, Hyun-Jin CHO, Sun-Joong PARK
  • Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device
    Patent number: 11417850
    Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: August 16, 2022
    Assignees: LG Display Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Kyu-Nam Kim, Duk-Young Jeon, Hyun-Jin Cho, Sun-Joong Park
  • QUANTUM-DOT LIGHT EMITTING DIODE, METHOD OF FABRICATING THE QUANTUM-DOT LIGHT EMITTING DIODE AND QUANTUM-DOT LIGHT EMITTING DISPLAY DEVICE
    Publication number: 20200403174
    Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.
    Type: Application
    Filed: June 23, 2020
    Publication date: December 24, 2020
    Applicants: LG DISPLAY CO., LTD., Korea Advanced Institute of Science and Technology
    Inventors: Kyu-Nam KIM, Duk-Young JEON, Hyun-Jin CHO, Sun-Joong PARK