Patents by Inventor Sun-Jung Kim

Sun-Jung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240071689
    Abstract: A method of manufacturing a multilayer electronic component includes forming a stack by stacking a plurality of ceramic green sheets on which conductive patterns are disposed on a support film, cutting the stack in a second direction, perpendicular to a first direction which is a stacking direction of the plurality of ceramic green sheets, cutting the stack in a third direction, perpendicular to the first and second directions, to obtain a plurality of unit chips, separating the unit chip from the support film, arranging the unit chip such that one of side surfaces of the unit chip is in contact with an adhesive tape, and attaching another one of the side surfaces to a ceramic green sheet for a side margin portion, and forming a side margin portion on the another one of side surfaces.
    Type: Application
    Filed: March 28, 2023
    Publication date: February 29, 2024
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Myung Chan SON, Yong PARK, Jong Ho LEE, Eun Jung LEE, Jung Tae PARK, Min Woo KIM, Ji Hyeon LEE, Sun Mi KIM
  • Publication number: 20240074258
    Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 ?m or less.
    Type: Application
    Filed: May 5, 2023
    Publication date: February 29, 2024
    Inventors: Wan Jung KIM, Dong Jo KIM, Sun Hwa KIM, Young Ji KIM, Chang Sik KIM, Kyung Ah NAM, Hyo Young MUN, Yong Seung PARK, Yi Seul UM, Dae Sang YUN, Kwan Hee LEE, So Young LEE, Young Hoon LEE, Young Seo CHOI, Sun Young KIM, Ji Won SOHN, Do Young LEE, Seung Hoon LEE
  • Patent number: 11821106
    Abstract: A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: November 21, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Keum Seok Park, Gyeom Kim, Yi Hwan Kim, Sun Jung Kim, Pan Kwi Park, Jeong Ho Yoo
  • Publication number: 20230317860
    Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
    Type: Application
    Filed: June 8, 2023
    Publication date: October 5, 2023
    Inventors: Seung Hun LEE, Dong Woo KIM, Dong Chan SUH, Sun Jung KIM
  • Patent number: 11682735
    Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
    Type: Grant
    Filed: April 15, 2021
    Date of Patent: June 20, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Hun Lee, Dong Woo Kim, Dong Chan Suh, Sun Jung Kim
  • Patent number: 11391773
    Abstract: The present invention provides a semiconductor integrated circuit for detecting leakage current to determine whether an electric leakage occurs in an electric line based on an induced voltage input from a leakage current detection unit 20 installed in the electric line, and an earth, leakage circuit breaker having the semiconductor integrated circuit. A semiconductor integrated circuit 100 for detecting leakage current includes: a signal amplification unit 110 configured to amplify the induced voltage; an interruption determination unit 130 configured to compare an output voltage output from the signal amplification unit with a preset reference voltage, and output an interruption signal for interrupting a power supply to the electric line; a flare current stabilization (FCS) circuit 150 for a signal amplification unit connected to the signal amplification unit; and a flare current stabilization (FCS) circuit 170 for an interruption determination unit connected to the interruption determination unit.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: July 19, 2022
    Assignee: SUNNYIC CORPORATION
    Inventor: Sun-Jung Kim
  • Publication number: 20220153828
    Abstract: The present prevention relates to methods for treating TNF?-related diseases by subcutaneously administering an antibody binding to TNF? (anti-TNF? antibody) or an antigen-binding fragment thereof. The treatment method, composition, kit or use according to the present invention provide an advantage of improving patient satisfaction, by improving convenience and quality of life, that is, by reducing the time required for administration and decreasing the length of stay of patients in a hospital compared to intravenous injection.
    Type: Application
    Filed: February 28, 2020
    Publication date: May 19, 2022
    Inventors: Sun Jung Kim, Sera Kim, Jee Hye Suh, Si Young Yang, Joon Ho Lee, So Hye Jo, Jin Sun Jung, Sun Hee Lee
  • Publication number: 20220101570
    Abstract: The present disclosure relates to a method and an apparatus for generating an X-ray image and a computer-readable recording medium.
    Type: Application
    Filed: July 17, 2019
    Publication date: March 31, 2022
    Inventor: Sun Jung KIM
  • Publication number: 20210371510
    Abstract: The present invention relates to a method of TNF-?-related disease by subcutaneously administering an antibody binding to TNF-? (anti-TNF-? antibody). A treatment method, composition, kit or use according to the present invention reduces the time for administration and the time for patients to stay in hospitals, thereby improving patient convenience and the quality of life of the patient. This provides the advantage of improving the patient's satisfaction.
    Type: Application
    Filed: August 29, 2018
    Publication date: December 2, 2021
    Inventors: Sun Jung Kim, Jee Hye Suh, Hyun Chul An, Sun Young Lee
  • Patent number: 11143713
    Abstract: A semiconductor integrated circuit for leak current detection which outputs an interruption signal to cut off electrical power supplied by a power supply to an electric line if a leakage current occurs including a leakage current processing unit and an output unit configured to output the interruption signal. The leakage current processing unit includes: a zero-power supply voltage detector; a counter when the power supply voltage pulse signal is input; a zero-input induction voltage detector configured to output a leakage current pulse signal whenever the input induction voltage becomes 0 V; a counter latch configured to latch a count value supplied by the counter and output the latched count value; an output induction voltage setting unit configured to calculate an output induction voltage; and a comparator configured to compare the output induction voltage with a predetermined trip level.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: October 12, 2021
    Assignee: SUNNYIC CORPORATION
    Inventor: Sun-Jung Kim
  • Publication number: 20210234050
    Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
    Type: Application
    Filed: April 15, 2021
    Publication date: July 29, 2021
    Inventors: Seung Hun LEE, Dong Woo KIM, Dong Chan SUH, Sun Jung KIM
  • Patent number: 11004985
    Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: May 11, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Hun Lee, Dong Woo Kim, Dong Chan Suh, Sun Jung Kim
  • Patent number: 10990802
    Abstract: An imaging apparatus and a control method thereof are provided. The method for controlling the imaging apparatus includes acquiring images having a same focal length by performing continuous imaging in a predetermined time when a user's imaging command is input, calculating motion vectors using the images and separating a foreground and a background of a first image among the images based on the calculated motion vectors and color information of the first image, and performing out focusing based on the separated foreground and the separated background.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: April 27, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-jung Kim, Beom-su Kim, Hong-il Kim, Tae-hwa Hong, Joo-young Son
  • Patent number: 10896505
    Abstract: Provided is a method for applying filters for dental CT imaging, including: acquiring the dental CT imaging using a dental CT apparatus; extracting an artifact region from the acquired image; applying a first filter to a region other than the artifact region in the acquired image; and outputting the dental CT imaging to which the filter is applied. Dental CT imaging is provided without an artifact region to assist in medical treatment. More specifically, the dental CT imaging without the artifact region around the metal or tooth is able to be provided to assist in dental treatment. Further, the dental CT imaging without a white artifact region is able to be provided at a boundary portion of field of view (FOV) to assist in dental treatment.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: January 19, 2021
    Assignee: OSSTEMIMPLANT CO., LTD.
    Inventor: Sun Jung Kim
  • Publication number: 20200333395
    Abstract: The present invention provides a semiconductor integrated circuit for detecting leakage current to determine whether an electric leakage occurs in an electric line based on an induced voltage input from a leakage current detection unit 20 installed in the electric line, and an earth, leakage circuit breaker having the semiconductor integrated circuit. A semiconductor integrated circuit 100 for detecting leakage current includes: a signal amplification unit 110 configured to amplify the induced voltage; an interruption determination unit 130 configured to compare an output voltage output from the signal amplification unit with a preset reference voltage, and output an interruption signal for interrupting a power supply to the electric line; a flare current stabilization (FCS) circuit 150 for a signal amplification unit connected to the signal amplification unit; and a flare current stabilization (FCS) circuit 170 for an interruption determination unit connected to the interruption determination unit.
    Type: Application
    Filed: April 13, 2020
    Publication date: October 22, 2020
    Inventor: Sun-Jung Kim
  • Patent number: 10797160
    Abstract: A method of fabricating a semiconductor device may include forming a fin structure on a substrate; forming an interface film having a first thickness on the fin structure using a first process; forming a gate dielectric film having a second thickness on the interface film using a second process different from the first process; and densifying the gate dielectric film using a third process different from the first and second processes. The second thickness may be greater than the first thickness, and the first thickness of the interface film may be unchanged after the densifying of the gate dielectric film.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: October 6, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun-Jun Sim, Won-Oh Seo, Sun-Jung Kim, Ki-Yeon Park
  • Patent number: 10790133
    Abstract: A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Keum Seok Park, Sun Jung Kim, Yi Hwan Kim, Pan Kwi Park, Dong Suk Shin, Hyun Kwan Yu, Seung Hun Lee
  • Publication number: 20200278401
    Abstract: A semiconductor integrated circuit for leak current detection which outputs an interruption signal to cut off electrical power supplied by a power supply to an electric line if a leakage current occurs including a leakage current processing unit and an output unit configured to output the interruption signal. The leakage current processing unit includes: a zero-power supply voltage detector; a counter when the power supply voltage pulse signal is input; a zero-input induction voltage detector configured to output a leakage current pulse signal whenever the input induction voltage becomes 0 V; a counter latch configured to latch a count value supplied by the counter and output the latched count value; an output induction voltage setting unit configured to calculate an output induction voltage; and a comparator configured to compare the output induction voltage with a predetermined trip level.
    Type: Application
    Filed: May 19, 2020
    Publication date: September 3, 2020
    Inventor: Sun-Jung Kim
  • Patent number: 10693017
    Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: June 23, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Hun Lee, Dong Woo Kim, Dong Chan Suh, Sun Jung Kim
  • Publication number: 20200185539
    Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
    Type: Application
    Filed: February 18, 2020
    Publication date: June 11, 2020
    Inventors: Seung Hun LEE, Dong Woo KIM, Dong Chan SUH, Sun Jung KIM