Abstract: Provided are a method and system for measuring a composition and property of a formation fluid. The method includes: acquiring a measuring model used for measuring a composition and a property of a formation fluid; using a signal measured by a sensor on a downhole hydrocarbon formation tester in real-time as input data and inputting the input data into the measuring model; processing the input data by the measuring model; and directly outputting a processing result as data on the composition and the property of the real-time formation fluid, or parsing the data on the composition and the property of the real-time formation fluid according to the processing result.

Abstract: Provided are a method and system for measuring a composition and property of a formation fluid. The method includes: acquiring a measuring model used for measuring a composition and a property of a formation fluid; using a signal measured by a sensor on a downhole hydrocarbon formation tester in real-time as input data and inputting the input data into the measuring model; processing the input data by the measuring model; and directly outputting a processing result as data on the composition and the property of the real-time formation fluid, or parsing the data on the composition and the property of the real-time formation fluid according to the processing result.

Abstract: A gallium nitride thin film on sapphire substrate having reduced bending deformation and a method for manufacturing the same. An etching trench structure is formed on a sapphire substrate by primary nitradation and HCl treatment and a gallium nitride film is grown thereon by secondary nitradation. The gallium nitride thin film on sapphire substrate comprises an etching trench structure formed on a sapphire substrate, wherein a function graph of a curvature radius Y according to a thickness X of a gallium nitride film satisfies Equation 1 below, and corresponds to or is located above a function graph drawn when Y0 is 6.23±1.15, A is 70.04±1.92, and T is 1.59±0.12: Y=Y0+A·e?(X?1)/T??[Equation 1] where Y is the curvature radius m, X is the thickness of the gallium nitride film, and Y0, A, and T are positive numbers.