Patents by Inventor Sun LINLIN

Sun LINLIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and formation method thereof
    Patent number: 11309184
    Abstract: A semiconductor structure and a formation method thereof are disclosed. The formation method includes: providing a base, wherein a first mandrel layer and a first mask layer located on the first mandrel layer are formed on the base, and openings exposing the first mandrel layer are formed in the first mask layer; forming a second mandrel layer covering the first mask layer, wherein the second mandrel layer also fills the openings; forming first trenches running through the second mandrel layer, the first mask layer and the first mandrel layer, wherein the side walls of the first trenches expose the second mandrel layer in the openings; forming side wall layers on the side walls of the first trenches; and etching to remove the second mandrel layer and the first mandrel layer below the positions of the openings by taking the side wall layers as masks to form second trenches running through the first mandrel layer, wherein the second trenches and the first trenches are isolated by the side wall layers.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: April 19, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Wang Wei, Su Bo, Sun Linlin, He Qiyang
  • SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
    Publication number: 20210166943
    Abstract: A semiconductor structure and a formation method thereof are disclosed. The formation method includes: providing a base, wherein a first mandrel layer and a first mask layer located on the first mandrel layer are formed on the base, and openings exposing the first mandrel layer are formed in the first mask layer; forming a second mandrel layer covering the first mask layer, wherein the second mandrel layer also fills the openings; forming first trenches running through the second mandrel layer, the first mask layer and the first mandrel layer, wherein the side walls of the first trenches expose the second mandrel layer in the openings; forming side wall layers on the side walls of the first trenches; and etching to remove the second mandrel layer and the first mandrel layer below the positions of the openings by taking the side wall layers as masks to form second trenches running through the first mandrel layer, wherein the second trenches and the first trenches are isolated by the side wall layers.
    Type: Application
    Filed: April 30, 2020
    Publication date: June 3, 2021
    Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Wang WEI, Su BO, Sun LINLIN, He QIYANG