Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a lower stack in which a plurality of first interlayer insulating layers and first conductive layers are alternately stacked, a plurality of cell plugs passing through the lower stack in a vertical direction, an upper stack in which a plurality of second interlayer insulating layers and at least one second conductive layer are alternately stacked on the lower stack, a plurality of drain select plugs passing through the upper stack and being in contact with an upper portion of the plurality of cell plugs, and a separation pattern separating adjacent drain select plugs among the plurality of drain select plugs, wherein the separation pattern is in contact with a sidewall of each of the adjacent drain select plugs.

Abstract: A semiconductor memory device includes a lower stack in which a plurality of first interlayer insulating layers and first conductive layers are alternately stacked, a plurality of cell plugs penetrating the lower stack in a vertical direction, an upper stack in which a plurality of second interlayer insulating layers and at least one second conductive layer are alternately stacked on the lower stack, a plurality of drain select plugs penetrating the upper stack and overlapping the plurality of cell plugs, respectively, and a separation pattern penetrating the upper stack and disposed between at least two adjacent drain select plugs among the plurality of drain select plugs, wherein the at least two adjacent drain select plugs each have a semi-cylindrical shape and remaining drain select plugs except for the at least two adjacent drain select plugs among the plurality of drain select plugs each have a cylindrical shape.

Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a lower stack in which a plurality of first interlayer insulating layers and first conductive layers are alternately stacked, a plurality of cell plugs passing through the lower stack in a vertical direction, an upper stack in which a plurality of second interlayer insulating layers and at least one second conductive layer are alternately stacked on the lower stack, a plurality of drain select plugs passing through the upper stack and being in contact with an upper portion of the plurality of cell plugs, and a separation pattern separating adjacent drain select plugs among the plurality of drain select plugs, wherein the separation pattern is in contact with a sidewall of each of the adjacent drain select plugs.

Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a lower stack in which a plurality of first interlayer insulating layers and first conductive layers are alternately stacked, a plurality of cell plugs passing through the lower stack in a vertical direction, an upper stack in which a plurality of second interlayer insulating layers and at least one second conductive layer are alternately stacked on the lower stack, a plurality of drain select plugs passing through the upper stack and being in contact with an upper portion of the plurality of cell plugs, and a separation pattern separating adjacent drain select plugs among the plurality of drain select plugs, wherein the separation pattern is in contact with a sidewall of each of the adjacent drain select plugs.

Abstract: Provided are a method and apparatus for generating a bundle invitation link. The method includes obtaining a plurality of invitation links from a first user terminal, each of the plurality of invitation links being connected to at least one community, generating a bundle invitation link connected to a detail page, the detail page including the plurality of invitation links, transmitting the bundle invitation link to a second user terminal, causing a display of the second user terminal to display the detail page in response to receiving, from the second user terminal, an input corresponding to the bundle invitation link, and receiving a data pair from the second user terminal, the data pair including at least one invitation link and an identification value of the second user terminal, and the at least one invitation link being selected from among the plurality of invitation links included in the detail page.

Abstract: Provided are a method and apparatus for generating a bundle invitation link. The method includes obtaining a plurality of invitation links from a first user terminal, each of the plurality of invitation links being connected to at least one community, generating a bundle invitation link connected to a detail page, the detail page including the plurality of invitation links, transmitting the bundle invitation link to a second user terminal, causing a display of the second user terminal to display the detail page in response to receiving, from the second user terminal, an input corresponding to the bundle invitation link, and receiving a data pair from the second user terminal, the data pair including at least one invitation link and an identification value of the second user terminal, and the at least one invitation link being selected from among the plurality of invitation links included in the detail page.

Abstract: Provided is a community management method including: receiving, from a first terminal, a generation request for a standby community; generating the standby community including a user of the first terminal as a participant, according to the generation request for the standby community; and generating a regular community including participants of the standby community as members in response to a number of the participants of the standby community reaching a target number of the standby community, wherein a writing function is restricted in the standby community and allowed in the regular community.

Abstract: The inventive indene derivatives of formula (I) are capable of selectively modulating the activities of peroxisome proliferator activated receptors (PPARs), causing no adverse side effects, and thus, they are useful for the treatment and prevention of disorders modulated by PPARs, i.e., metabolic syndromes such as diabetes, obesity, arteriosclerosis, hyperlipidemia, hyperinsulinism and hypertension, inflammatory diseases such as osteoporosis, liver cirrhosis and asthma, and cancer.

Abstract: The inventive indene derivatives of formula (I) are capable of selectively modulating the activities of peroxisome proliferator activated receptors (PPARs), causing no adverse side effects, and thus, they are useful for the treatment and prevention of disorders modulated by PPARs, i.e., metabolic syndromes such as diabetes, obesity, arteriosclerosis, hyperlipidemia, hyperinsulinism and hypertension, inflammatory diseases such as osteoporosis, liver cirrhosis and asthma, and cancer.