Abstract: The present invention relates to a composition for treating inflammatory diseases comprising germanium telluride nanosheets coated with polyvinylpyrrolidone, and the nanosheets have excellent anti-inflammatory and thus are excellent in treating inflammatory bowel disease and psoriasis.

Abstract: A memory storage device includes a non-volatile memory including a plurality of memory blocks and a memory controller configured to control the non-volatile memory, wherein the memory controller is configured to provide host data including write data to the non-volatile memory, wherein the memory controller is configured to perform a garbage collection operation on the memory blocks to provide garbage collection data to the non-volatile memory when a free block count of the memory blocks is smaller than a first threshold value, and wherein the memory controller is configured to increase a capacity for providing the host data when the free block count of the memory blocks is greater than a second threshold value less than the first threshold value and a valid page count of the first memory block among the memory blocks is less than a third threshold value.

Abstract: A storage device includes a non-volatile memory including a first block, a second block and a block management area that stores an initial data write time and a final data write time for each of the first block and the second block. The storage device also includes a memory controller that determines a creation time and a modification time for first data in response to a permanently delete command identifying the first data, selects at least one of the first block and the second block to be permanently deleted by comparing the initial data write time and the final data write time for each of the first block and the second block with the creation time and the modification time, and permanently deletes the selected at least one of the first block and the second block.

Abstract: A storage device includes a non-volatile memory including a first block, a second block and a block management area that stores an initial data write time and a final data write time for each of the first block and the second block. The storage device also includes a memory controller that determines a creation time and a modification time for first data in response to a permanently delete command identifying the first data, selects at least one of the first block and the second block to be permanently deleted by comparing the initial data write time and the final data write time for each of the first block and the second block with the creation time and the modification time, and permanently deletes the selected at least one of the first block and the second block.

Abstract: A reading method of a flash memory, the reading method including: sensing hard data of a first target page by using a first hard read voltage; and generating soft data of the first target page by using at least one pair of, that is, two, first soft read voltages whose voltage levels are different from a voltage level of the first hard read voltage, while the flash memory performs a first operation on the hard data.

Abstract: The method of operating the data storage device includes performing channel distribution non-sequentially based on a logical address included in a data signal and outputting a channel address, and at least one of writing data to and reading stored data from a memory connected to one of a plurality of channels based on the channel address.

Abstract: A data storage device includes a flash memory including a plurality of data blocks and a flash translation layer that divides the plurality of data blocks into a data block of a first group and a data block of a second group, and that records the data signal to a data block of the first group or a data block of the second group which is extended from a data block of the first group.

Abstract: A reading method of a flash memory, the reading method including: sensing hard data of a first target page by using a first hard read voltage; and generating soft data of the first target page by using at least one pair of, that is, two, first soft read voltages whose voltage levels are different from a voltage level of the first hard read voltage, while the flash memory performs a first operation on the hard data.

Abstract: An input/output control method and apparatus optimized for a flash memory, which can improve the performance of the flash memory. The input/output control method optimized for a flash memory includes determining whether a random write operation of data occurs in a flash memory, and successively writing randomly input data in a predetermined surplus region of the flash memory if it is judged that the random write operation occurs.

Abstract: A solid state drive (SSD) comprises an input/output interface and a memory controller. The input/output interface stores a plurality of input/output commands. The memory controller comprises first and second input/output contexts and an input/output scheduler. The first and second input/output contexts process input/output commands from the input/output interface in an alternating sequence. The input/output scheduler schedules operations of the first and second input/output contexts. In particular, the input/output scheduler suspends execution of a first input/output command by the first input/output context upon determining that an execution time of the first input/output command exceeds an interval before a deadline time. After suspending execution of the first input/output command, the input/output scheduler transmits a second input/output command to the second input/output context.

Abstract: The non-volatile random access memory (RAM) includes a non-volatile RAM array, a buffer configured to buffer data to be programmed in the non-volatile RAM array and configured to buffer data read from the non-volatile RAM array, and a control block configured to read data from at least one of the non-volatile RAM array and the buffer based on whether the data to be read has been stored in the buffer, a temperature when the data was programmed, and a time lapse since the programming of the data.

Abstract: A solid state drive (SSD) comprises an input/output interface and a memory controller. The input/output interface stores a plurality of input/output commands. The memory controller comprises first and second input/output contexts and an input/output scheduler. The first and second input/output contexts process input/output commands from the input/output interface in an alternating sequence. The input/output scheduler schedules operations of the first and second input/output contexts. In particular, the input/output scheduler suspends execution of a first input/output command by the first input/output context upon determining that an execution time of the first input/output command exceeds an interval before a deadline time. After suspending execution of the first input/output command, the input/output scheduler transmits a second input/output command to the second input/output context.

Abstract: A data storage device capable of improving reading and writing performance includes at least one memory chip comprising a control unit and a plurality of blocks for storing data, and communicating with a host through a channel; and memory storing data output from the at least one memory chip. The control unit may sequentially read data having continuous logic addresses and discontinuous physical addresses from the plurality of blocks and store the data in the memory to have continuous physical addresses.

Abstract: The method of operating the data storage device includes performing channel distribution non-sequentially based on a logical address included in a data signal and outputting a channel address, and at least one of writing data to and reading stored data from a memory connected to one of a plurality of channels based on the channel address.

Abstract: A data storage device includes a flash memory including a plurality of data blocks and a flash translation layer that divides the plurality of data blocks into a data block of a first group and a data block of a second group, and that records the data signal to a data block of the first group or a data block of the second group which is extended from a data block of the first group.

Abstract: The non-volatile random access memory (RAM) includes a non-volatile RAM array, a buffer configured to buffer data to be programmed in the non-volatile RAM array and configured to buffer data read from the non-volatile RAM array, and a control block configured to read data from at least one of the non-volatile RAM array and the buffer based on whether the data to be read has been stored in the buffer, a temperature when the data was programmed, and a time lapse since the programming of the data.

Abstract: An input/output control method and apparatus optimized for a flash memory, which can improve the performance of the flash memory. The input/output control method optimized for a flash memory includes determining whether a random write operation of data occurs in a flash memory, and successively writing randomly input data in a predetermined surplus region of the flash memory if it is judged that the random write operation occurs.