Patents by Inventor Sun-min MOON
Sun-min MOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11233118Abstract: An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.Type: GrantFiled: May 1, 2019Date of Patent: January 25, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Lim Park, Sun-Min Moon, Chang-Hwa Jung, Young-Geun Park, Jong-Bom Seo, Kyu-Ho Cho
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Patent number: 11177263Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: GrantFiled: March 23, 2020Date of Patent: November 16, 2021Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Publication number: 20210140048Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.Type: ApplicationFiled: January 20, 2021Publication date: May 13, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Sun-min MOON, Youn-soo KIM, Han-jin LIM, Yong-jae LEE, Se-hoon OH, Hyun-jun KIM, Jin-sun LEE
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Patent number: 10847603Abstract: In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.Type: GrantFiled: March 22, 2019Date of Patent: November 24, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun-min Moon, Su-hwan Kim, Hyun-jun Kim, Seong-yul Park, Young-lim Park, Jae-wan Chang
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Patent number: 10825893Abstract: A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.Type: GrantFiled: June 8, 2018Date of Patent: November 3, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Kyu-ho Cho, Sang-yeol Kang, Sun-min Moon, Young-lim Park, Jong-bom Seo
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Publication number: 20200243531Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: ApplicationFiled: March 23, 2020Publication date: July 30, 2020Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Patent number: 10636795Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: GrantFiled: May 15, 2019Date of Patent: April 28, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Publication number: 20200091279Abstract: In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.Type: ApplicationFiled: March 22, 2019Publication date: March 19, 2020Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun-min MOON, Su-hwan KIM, Hyun-jun KIM, Seong-yul PARK, Young-lim PARK, Jae-wan CHANG
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Publication number: 20190355804Abstract: An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.Type: ApplicationFiled: May 1, 2019Publication date: November 21, 2019Inventors: YOUNG-LIM PARK, SUN-MIN MOON, CHANG-HWA JUNG, YOUNG-GEUN PARK, JONG-BOM SEO, KYU-HO CHO
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Patent number: 10468256Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.Type: GrantFiled: April 7, 2017Date of Patent: November 5, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Sun-min Moon, Youn-soo Kim, Han-jin Lim, Yong-jae Lee, Se-hoon Oh, Hyun-jun Kim, Jin-sun Lee
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Publication number: 20190267384Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: ApplicationFiled: May 15, 2019Publication date: August 29, 2019Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Publication number: 20190165088Abstract: A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.Type: ApplicationFiled: June 8, 2018Publication date: May 30, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Kyu-ho CHO, Sang-yeol KANG, Sun-min MOON, Young-lim PARK, Jong-born SEO
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Patent number: 10297600Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: GrantFiled: April 18, 2018Date of Patent: May 21, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Patent number: 10103026Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.Type: GrantFiled: August 3, 2016Date of Patent: October 16, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Sun-min Moon, Youn-soo Kim, Han-jin Lim, Yong-jae Lee, Se-hoon Oh, Hyun-jun Kim, Jin-sun Lee
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Publication number: 20180240800Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: ApplicationFiled: April 18, 2018Publication date: August 23, 2018Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Patent number: 9978753Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: GrantFiled: January 19, 2017Date of Patent: May 22, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Publication number: 20170350012Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.Type: ApplicationFiled: August 24, 2017Publication date: December 7, 2017Inventors: Sun-min MOON, Youn-soo KIM, Han-jin LIM, Yong-jae LEE, Se-hoon OH, Hyun-jun KIM, Jin-sun LEE
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Publication number: 20170352666Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: ApplicationFiled: January 19, 2017Publication date: December 7, 2017Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Publication number: 20170211183Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.Type: ApplicationFiled: April 7, 2017Publication date: July 27, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Sun-min MOON, Youn-soo KIM, Han-jin LIM, Yong-jae LEE, Se-hoon OH, Hyun-jun KIM, Jin-sun LEE
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Publication number: 20170040172Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.Type: ApplicationFiled: August 3, 2016Publication date: February 9, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Sun-min MOON, Youn-soo KIM, Han-jin LIM, Yong-jae LEE, Se-hoon OH, Hyun-jun KIM, Jin-sun LEE