Abstract: The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO2. AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 ?) on LiCoO2 significantly enhance stability relative to bare LiCoO2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials.

Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.

Abstract: A database system includes a persistent storage system, a memory storing metadata defining a tenant object and a plurality of database artifacts, a first instance of the tenant object, the first instance associated with a first plurality of the database artifacts including first data associated with the first instance of the tenant object, and a second instance of the tenant object, the second instance associated with a second plurality of the database artifacts including second data associated with the second instance of the tenant object. A processing unit is to execute program code of a database instance to cause the database system to encrypt the first data associated with the first instance of the tenant object using a first public encryption key and store the encrypted first data in the persistent storage system, and encrypt the second data associated with the second instance of the tenant object using a second public encryption key and store the encrypted second data in the persistent storage system.

Abstract: An electronic device is provided. The electronic device includes two housing structures, a hinge structure, and a flexible display, the hinge structure includes a first saw-toothed spur gear, a second saw-toothed spur gear, a third saw-toothed spur gear, a fourth saw-toothed spur gear, a first guide structure fixed to the first housing structure and rotated by the gears, and a second guide structure fixed to the second housing structure and rotated in an opposite direction of the first guide structure, the first guide structure is rotated about a first axis formed from a bottom surface of the flexible display upwards, and the second guide structure is rotated about a second axis that is spaced apart from the first axis and is formed from the bottom surface of the flexible display.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

Abstract: An image compression method includes segmenting, by a processor, an image file to be compressed into a plurality of blocks; performing, by the processor, a first pixel conversion based on pixel difference values between blocks from among the plurality of blocks; and storing the image file of which the first pixel conversion is completed in a first format.

Abstract: An infrared absorbing polymer includes a first structural unit represented by Chemical Formula 1 and a second structural unit including at least one of Chemical Formula 2A to Chemical Formula 2. The infrared absorbing polymer may be included in an infrared absorbing/blocking film, a photoelectric device, a sensor, and an electronic device.

Abstract: Feedback methods for repetitive uplink transmissions in a communication system are disclosed. An operation method of a terminal may comprise receiving DL data #1 from a base station through a DL data channel #1; receiving DL data #2 from the base station through a DL data channel #2; and when each of a UL control channel #1 on which an HARQ response #1 for the DL data #1 is to be transmitted and a UL control channel #2 on which an HARQ response #2 for the DL data #2 is to be transmitted overlaps with a UL data channel assigned by the base station, transmitting the HARQ response #1 and the HARQ response #2 to the base station through the UL data channel. Therefore, the performance of the communication system can be improved.

Abstract: A client forensic watermarking device, system, and method. A forensic watermarking device capable of communicating with a content server selecting a watermark mask area in which a watermark mask is displayed from video content and storing watermark area information about the watermark mask area in a storage unit according to the present disclosure may provide: a downloading unit requesting the video content to be played from the content server and receiving the video content and the watermark area information from the content server; a watermark mask generation unit outputting the watermark mask using the watermark area information inputted from the downloading unit; and an overlay unit superimposing the watermark mask inputted from the watermark mask generation unit on the watermark mask area of the video content inputted from the downloading unit, thereby enabling a client to display a forensic watermark so as to deal with a collusion attack.

Abstract: An operation method of a terminal in a communication system may include: receiving, from a base station, quality of service (QoS) information for preamble groups and information on preambles belonging to each of the preamble groups; selecting one preamble group from among the preamble groups based on the QoS information and a QoS of the terminal; selecting a preamble within the one preamble group based on the information on preambles belonging to each of the preamble groups; transmitting a first message including the selected preamble to the base station; and receiving, from the base station, a second message that is a response to the first message.

Abstract: The present invention provides iron oxide magnetic particles including an iron oxide and MXn, wherein M includes one or more selected from the group consisting of Cu, Sn, Pb, Mn, Ir, Pt, Rh, Re, Ag, Au, Pd, and Os, X includes one or more selected from the group consisting of F, Cl, Br, and I, and n is an integer of 1 to 6.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer, and an external electrode disposed on the body. The dielectric layer includes a BaTiO3-based base material main ingredient, a sub-ingredient including Dy, and an additive. The additive is one or more of Sm, Gd and Tb, and a content of the additive is 25 mol or more and less than 50 mol relative to 100 mol of Dy. The dielectric layer includes a plurality of dielectric grains. When an average grain size of the plurality of dielectric grains is represented by G, and an average thickness of the dielectric layer is represented by td, 1.75?td/G?2.23 is satisfied.

Abstract: An operation method of a terminal in a communication system may comprise: receiving, from a base station, basis preamble information and linear combination information; generating a superposed preamble by using the basis preamble information and the linear combination information; transmitting, to the base station, a first message including the generated superposed preamble; and receiving, from the base station, a second message that is a response signal for the first message.

Abstract: A semiconductor system includes a first semiconductor apparatus and a second semiconductor apparatus. The first semiconductor apparatus transmits a command signal during a command cycle and transmits an address signal during an address cycle. The first semiconductor apparatus transmits a selection signal during a LUN selection cycle before the command cycle. The second semiconductor apparatus performs a data input/output operation based on the selection signal, the command signal, and the address signal.

Abstract: A semiconductor system includes a first semiconductor apparatus and a second semiconductor apparatus. The first semiconductor apparatus provides the second semiconductor apparatus with a chip enable signal and a command address signal set, and the second semiconductor apparatus performs an internal operation based on the chip enable signal and the command address signal set. The first semiconductor apparatus provides the second semiconductor apparatus with a selection chip enable command, and the second semiconductor apparatus transmits data to the first semiconductor apparatus or receives the data from the first memory device after receiving the selection chip enable command.

Abstract: The present invention provides a method for preparing iron oxide magnetic particles and iron oxide magnetic particles prepared thereby, wherein the method includes (a) synthesizing a complex by reacting iron and one or more compounds selected from the group consisting of an aliphatic hydrocarbonate having 4 to 25 carbon atoms and an amine compound, (b) synthesizing an iron oxide crystal nucleus by mixing the complex with a mixture of an unsaturated aliphatic hydrocarbon-based compound having 4 to 25 carbon atoms and an ether-based compound, and (c) forming a shell by mixing the iron oxide crystal nucleus and an MXn compound with a mixture of an unsaturated aliphatic hydrocarbon-based compound having 4 to 25 carbon atoms and an ether-based compound, wherein M is a heavy atom element, X is a halogen element, and n is an integer of 1 to 6.

Abstract: A soft-decision decoding method used in a digital communication system may comprise: using a hard-decision Bose-Chadhuri-Hocquenghem (BCH) decoder as a stopping rule of ordered statistic decoding (OSD) before performing the OSD on an input signal; and performing the OSD when a highest order of an error position equation generated in the BCH decoder is not equal to a number of solutions found in the BCH decoder.

Abstract: A dynamic fault clustering method and apparatus for efficiently managing redundancy in semiconductor memories performs a collection operation of searching for and detecting a fault and an operation of appropriately clustering the fault at the same time, which reduces an amount of time spent performing Built-In Redundancy Analysis (BIRA).

Abstract: Provided is a security authentication method of a network video recorder (NVR) including assigning a terminal unique index to each of pseudo-random functions included in a pseudo-random function set using terminal information; transmitting a session key having a predetermined expiry time and the pseudo-random function set with the assigned terminal unique index to a terminal; calculating a first terminal unique index for authenticating a first message using a predetermined bitstream of the first message received from the terminal; selecting a first pseudo-random function for authenticating the first message using the calculated first terminal unique index; generating a first independent private key of the terminal for authenticating the first message by inputting the session key and a MAC address of the terminal to the first pseudo-random function; and generating a message authentication code for the first message using the first independent private key and authenticating the first message.

Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.