Patents by Inventor Sun-Seok Han
Sun-Seok Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6847516Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.Type: GrantFiled: September 4, 2002Date of Patent: January 25, 2005Assignee: Jusung Engineering Co., Ltd.Inventors: Gi-Chung Kwon, Hong-Sik Byun, Sung-Weon Lee, Hong-Seub Kim, Sun-Seok Han, Bu-Jin Ko, Joung-Sik Kim
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Patent number: 6770836Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.Type: GrantFiled: March 19, 2002Date of Patent: August 3, 2004Assignee: Jusung Engineering Co., Ltd.Inventors: Gi-Chung Kwon, Hong-Sik Byun, Sung-Weon Lee, Hong-Seub Kim, Sun-Seok Han, Bu-Jin Ko, Joung-Sik Kim
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Patent number: 6685800Abstract: Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.Type: GrantFiled: November 14, 2001Date of Patent: February 3, 2004Assignee: Jusung Engineering Co. Ltd.Inventors: Hong Seub Kim, Gi Chung Kwon, Sun Seok Han, Choong Won Lee, Sung Weon Lee, Hong Sik Byun
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Patent number: 6653988Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate.Type: GrantFiled: June 27, 2002Date of Patent: November 25, 2003Assignee: Jusung Engineering, Co., LTDInventors: Gi Chung Kwon, Hong Sik Byun, Sung Weon Lee, Hong Seub Kim, Sun Seok Han, Bu Jin Ko, Joung Sik Kim
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Publication number: 20030066605Abstract: An air exhaust system of a chamber for manufacturing a semiconductor device comprises a chamber, a chuck formed vertically through a bottom of the chamber, a plurality of openings arranged around the chuck with a same area and a same distance each other, a plurality of outlet ducts having a same area and a length, one end of each of the outlet duct being connected respectively to each of the openings, a buffer system connecting the other end of each of the outlet duct into one, a gate valve connected to the buffer system, an auto pressure controller connected to the gate valve, a turbo pump connected to the auto pressure controller for exhausting gaseous material of an interior of the chamber, and a scrubber connected to the turbo pump for filtering and discharging the gaseous material of the interior of the chamber.Type: ApplicationFiled: October 4, 2002Publication date: April 10, 2003Inventors: Bu-Jin Ko, Jung-Sik Kim, Sun-Seok Han
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Publication number: 20030043530Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.Type: ApplicationFiled: September 4, 2002Publication date: March 6, 2003Inventors: Gi-Chung Kwon, Hong-sik Byun, Sung-Weon Lee, Hong-Seub Kim, Sun-Seok Han, Bu-Jin Ko, Joung-Sik Kim
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Publication number: 20030001792Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate.Type: ApplicationFiled: June 27, 2002Publication date: January 2, 2003Applicant: Jusung Engineering Co., Ltd.Inventors: Gi Chung Kwon, Hong Sik Byun, Sung Weon Lee, Hong Seub Kim, Sun Seok Han, Bu Jin Ko, Joung Sik Kim
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Publication number: 20020189763Abstract: Disclosed is a plasma process apparatus in which a semiconductor device manufacturing process using a plasma is performed. The apparatus includes: a vacuum chamber in which a semiconductor device manufacturing process is performed; a very high frequency (VHF) power source for generating a VHF power; a VHF parallel resonance antenna having a plurality of antenna coils connected in parallel to each other, and multiple variable capacitors insertion-installed in series in the antenna coils, the antenna being installed at an outer upper portion of the vacuum chamber, and supplied with the VHF power from the VHF power source; and an impedance matching box for impedance matching between the VHF power and the VHF parallel resonance antenna.Type: ApplicationFiled: June 17, 2002Publication date: December 19, 2002Applicant: Jusung Engineering Co., Ltd.Inventors: Gi Chung Kwon, Hong Sik Byun, Sung Weon Lee, Hong Seub Kim, Sun Seok Han, Bu Jin Ko, Joung Sik Kim
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Publication number: 20020130110Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.Type: ApplicationFiled: March 19, 2002Publication date: September 19, 2002Inventors: Gi-Chung Kwon, Hong-Sik Byun, Sung-Weon Lee, Hong-Seub Kim, Sun-Seok Han, Bu-Jin Ko, Joung-Sik Kim
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Publication number: 20020088548Abstract: Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.Type: ApplicationFiled: November 14, 2001Publication date: July 11, 2002Applicant: JUSUNG ENGINEERING CO., LTD.Inventors: Hong Seub Kim, Gi Chung Kwon, Sun Seok Han, Choong Won Lee, Sung Weon Lee, Hong Sik Byun
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Publication number: 20020007794Abstract: Disclosed is an inductively coupled plasma processing apparatus which has a very-high-frequency parallel antenna producing inductively-coupled plasma for a large substrate. This plasma processing apparatus includes a very high frequency power source in order to generate the high dense plasma, and parallel-connected antenna units that receive the very high frequency power from the very high frequency source. The very high frequency power has a frequency of 20 MHz to 300 MHz. According to present invention, while the plasma density can be raised, the electron temperature can be lowered. Thus, when the dry etch process is conducted using CFx, the CFx/F ratio can be adjusted to have the low density of fluorine radical. And also, it is possible to have the high radical density of CF2, CF3 and the like. As a result, the proper radical ratio, which is relative to increase selection ratio, enhances the dry etch process excellently.Type: ApplicationFiled: May 31, 2001Publication date: January 24, 2002Inventors: Hong-Sik Byun, Gi-Chung Kwon, Sung-Weon Lee, Hong-Seub Kim, Sun-Seok Han, Yong-Kwan Lee, Dong-Seok Lee, Hong-Yong Chang