Abstract: The present invention relates to a bad odor removal system that is applied to a long sewage pipe, and provides a bad odor removal system for a swage pipe, and the system basically comprises: deodorizers which are installed at certain intervals on the upper part of the sewage pipe; and a bad odor ventilating device which is installed on the inside of the sewage pipe in connection with said deodorizers, and includes a cooling device, wherein an air flow blocking membrane is installed on the inside of the sewage pipe and bad odor dispersion-preventive plates that actively operate are installed on an outlet and a manhole, thereby effectively blocking all kinds of bad odors that may be generated from the entire sewage pipe.

Abstract: There are disclosed a method for managing a pollution prevention facility and a system for effectively managing the pollution prevention facility which can exhaust pollutants, and a system thereof. A method for managing a pollution prevention facility includes a first measuring step of measuring pollutants before a pollution prevention facility treats a pollutant outlet; a second measuring step of measuring the amount of pollutants after the pollution prevention facility treats the pollutant outlet; and a managing step of managing an exchange period of a filling material provided in the pollution prevention facility.

Abstract: An electrically driven stepmotor valve assembly including separable annular stator and rotor-valve assemblies. The rotor-like assembly having a cylindrical housing adapted to slip fit inside a central, domed, stator cavity, with alignable locking members on these assemblies permitting rotary interlocking upon the slip fit assembly thereof. A sealing arrangement, in the vicinity of the open end of the stator assembly, peripherally seals the stator and rotor-valve assemblies relative to each other, when assembled, with the rotor housing having a locating plate ring portion which, in turn, supports an elastic sealing member that fits into a groove in a bottom wall of the stator housing. A plurality of differing sealing arrangement designs and structures, including sealing member reinforcing structures, are set forth for the sealing of the interlocked stator and rotor-valve assemblies relative to each other.

Abstract: Disclosed is a voice message recording/playing method using voice recognition in which if a user's voice command is inputted through a microphone in a voice recognition mode selected by a function selection key, voice is recognized and then a preset command is performed correspondingly to the inputted voice command, the method including the steps of: selecting a set mode using the function selection key; if a system is in a system-on state in the mode selecting step, sequentially issuing a voice command whenever the function selection key is pressed; if a record mode is selected in the mode selecting step, recording a user's voice message corresponding to a pre-stored voice command in a data memory according to a guidance message; if a voice recognition standby mode is selected in the mode selecting step, recognizing the inputted user's voice command to detect a corresponding voice message from the data memory and voice the detected voice message through a speaker; and if the voice command is not inputted for

Abstract: Method for forming a single crystal GaN semiconductor substrate and a GaN diode with the substrate is disclosed which forms in a short time period, has a low crystal defect concentration and allows forming a size large enough to fabricate an optical device, the method including either the steps of fast growth of a GaN group material on an oxide substrate to a thickness without cracking and subjecting to mechanical polish to remove a portion of the oxide substrate, and growing GaN again on the grown GaN layer and complete removal of the remaining oxide substrate to obtain a GaN film, or the steps of separating the oxide substrate from the GaN layer utilizing cooling to obtain a GaN film, grown GaN on the GaN film to a predetermined thickness to form a GaN bulk single crystal and mirror polishing it to form the GaN single crystal substrate, whereby a defectless GaN single crystal substrate of a size required for fabrication of an optical device can be obtained within a short time period because fast homoeptaxia