Abstract: A thin film transistor and a display panel having the same are provided. A display panel includes a substrate, an active layer disposed over the substrate and including a source region, a drain region, and a middle region between the source region and the drain region, and a gate electrode over the active layer and disposed overlapping with the middle region, and the active layer includes a plurality of holes disposed symmetrically with respect to the middle region. The display panel can improve its reliability owing to heat dissipation paths through the plurality of holes.

Abstract: The present disclosure discloses an array substrate and a display device including thereof. The array substrate includes a substrate, a shield metal over the substrate and a thin film transistor including an active layer with a channel region over the shield metal and a thermal gradient portion in at least one of the shield metal, the active layer and the array substrate so as to lower a temperature of a first area of the channel region than a temperature of a second area of the channel region. A cooling zone between the channel region and the shield metal is defined by the thermal gradient portion. The array substrate and a display device including the array substrate including the thermal gradient portion that defines the cooling zone between the thin film transistor and the shield metal can improves Kink effect, maintain high driving voltage, increase on current and/or improve switching properties.

Abstract: A thin film transistor and a display panel having the same are provided. A display panel includes a substrate, an active layer disposed over the substrate and including a source region, a drain region, and a middle region between the source region and the drain region, and a gate electrode over the active layer and disposed overlapping with the middle region, and the active layer includes a plurality of holes disposed symmetrically with respect to the middle region. The display panel can improve its reliability owing to heat dissipation paths through the plurality of holes.

Abstract: The present disclosure relates to an organic light emitting display device and a method of fabricating the same. The organic light emitting display device comprises a first substrate including a plurality of sub-pixels; a thin film transistor in each of the plurality of sub-pixels and on the first substrate; an organic light emitting diode in each of the plurality of sub-pixels and on the first substrate; and an aging voltage supply line extending from a lower surface of the first substrate to a portion of the thin film transistor and supplying an aging voltage to the thin film transistor.

Abstract: The present disclosure discloses an array substrate and a display device including thereof. The array substrate includes a substrate, a shield metal over the substrate and a thin film transistor including an active layer with a channel region over the shield metal and a thermal gradient portion in at least one of the shield metal, the active layer and the array substrate so as to lower a temperature of a first area of the channel region than a temperature of a second area of the channel region. A cooling zone between the channel region and the shield metal is defined by the thermal gradient portion. The array substrate and a display device including the array substrate including the thermal gradient portion that defines the cooling zone between the thin film transistor and the shield metal can improves Kink effect, maintain high driving voltage, increase on current and/or improve switching properties.

Abstract: An organic light emitting display device comprises a substrate including a display area and a non-display area, a driving thin film transistor and at least one switching thin film transistor in the display area, and an organic light device in the display area, wherein the driving thin film transistor and the switching thin film transistor include respectively an oxide semiconductor layer, and wherein a surface treating layer including a pattern of protrusions is on an upper surface of the oxide semiconductor layer of the driving thin film transistor.

Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.

Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.