Abstract: A memory cell array is provided. The memory cell array includes: a plurality of memory cells arranged in a plurality of rows and a plurality of columns; a plurality of word lines electrically connected to the plurality of rows, respectively; a plurality of source lines electrically connected to the plurality of columns, respectively; and a plurality of bit lines electrically connected to the plurality of columns, respectively. A plurality of inactivated word lines are configured to be applied a bias voltage that is zero, and the plurality of source lines are configured to be applied a positive bias voltage.

Abstract: A golf club brush is disclosed, the golf club brush includes a brush coupled to a carrier, the carrier being disposed within a housing. The carrier is configured to translate along a housing channel of the housing to be in either a retracted state or an expanded state via a spring disposed therein. In some embodiments, the golf club brush has a detachable brush-element configured to detachably couple to the carrier by a brush fastener. In some embodiments, bristles of the brush element form an angle relative to the carrier. In some embodiments, the carrier forms an angle relative to the housing. Such angles decrease a likelihood of a golf club making contact with an unintended portion of the golf club brush.

Abstract: The present disclosure describes methods of differentiating cardiomyocyte progenitor cells and mature cardiomyocyte cells from pluripotent stem cells. The methods may include differentiating pluripotent stems cells on a substrate including (i) laminin-511 or 521 and (ii) laminin 221. The mature cardiomyocyte cells produced by the method may form a human heart muscle cell line for use in regenerative cardiology.

Abstract: The present disclosure describes methods of differentiating cardiomyocyte progenitor cells and mature cardiomyocyte cells from pluripotent stem cells. The methods may include differentiating pluripotent stems cells on a substrate including (i) laminin-511 or 521 and (ii) laminin 221. The mature cardiomyocyte cells produced by the method may form a human heart muscle cell line for use in regenerative cardiology.

Abstract: A golf club brush is disclosed, the golf club brush is configured with a retractable brush element for retractably storing in a housing, the retractable brush element being coupled to a spring-element for accomplishing retractability.

Abstract: A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

Abstract: A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

Abstract: Provided are gas injection apparatuses, thin-film deposition equipment, and methods for manufacturing a semiconductor device.

Abstract: Apparatus and associated methods relate to fitting a virtual mask to a virtual face by first fitting a chin region of the virtual mask to the virtual face, then determining an virtual mask angle that maintains the fitted chin region while simultaneously fitting a nose-bridge region of the virtual mask to the virtual face, and then calculating a fit-quality metric corresponding to the fitted position. In an illustrative embodiment, the fitted chin region may include the high curvature menton region of the chin. In some examples, a virtual mask may be virtually pressed toward the virtual face using a predetermined force corresponding to a force of a mask securing device of a real mask corresponding to the virtual mask In an exemplary embodiment, the fitting of a virtual mask to a virtual face may advantageously yield a mask's fit quality in a brief amount of time.

Abstract: The present disclosure describes methods of differentiating cardiomyocyte progenitor cells and mature cardiomyocyte cells from pluripotent stem cells. The methods may include differentiating pluripotent stems cells on a substrate including (i) laminin-511 or 521 and (ii) laminin 221. The mature cardiomyocyte cells produced by the method may form a human heart muscle cell line for use in regenerative cardiology.

Abstract: Anionic polymers comprising. organic counterfoils exhibit improved biodegradability. The anionic polymers are useful as antiscalants. The biodegradability of an anionic polymer may be improved by replacing inorganic counterions with organic counterions.

Abstract: A method of fabricating a nonvolatile memory device includes providing an intermediate structure in which a floating gate and an isolation film are disposed adjacent to each other on a semiconductor substrate and a gate insulating film is disposed on the floating gate and the isolation film, forming a conductive film on the gate insulating film, and annealing the conductive film so that part of the conductive film on an upper portion of the floating gate flows down onto a lower portion of the floating gate and an upper portion of the isolation film.

Abstract: A method of fabricating a nonvolatile memory device includes providing an intermediate structure in which a floating gate and an isolation film are disposed adjacent to each other on a semiconductor substrate and a gate insulating film is disposed on the floating gate and the isolation film, forming a conductive film on the gate insulating film, and annealing the conductive film so that part of the conductive film on an upper portion of the floating gate flows down onto a lower portion of the floating gate and an upper portion of the isolation film.

Abstract: Methods of fabricating a silicon oxide layer using an inorganic silicon precursor and methods of fabricating a semiconductor device using the same are provided. The methods of fabricating a semiconductor device include forming a tunnel insulating layer and a charge storage layer on a substrate; forming a dielectric layer structure on the charge storage layer using an atomic layer deposition (ALD) method, the dielectric layer structure including a first dielectric layer formed of silicon oxide, a second dielectric layer on the first dielectric layer formed of a material different from the material forming the first dielectric layer, and a third dielectric layer formed of the silicon oxide on the second dielectric layer; and forming a control gate on the dielectric layer structure.

Abstract: In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.

Abstract: This invention includes a heat sink structure for use in a semiconductor package that includes a ring structure with down sets and a heat sink connected to the ring structure. The down sets can be slanted or V-shaped. The invention also includes a method of manufacturing a semiconductor package that includes inserting a substrate with an attached semiconductor chip in a first mold portion, placing a heat sink structure on top of a portion of the substrate, placing a mold release film onto a second mold portion, clamping a second mold portion onto a portion of the heat sink structure, injecting an encapsulant into a mold cavity, wherein the encapsulant surrounds portions of the substrate, semiconductor chip and heat sink structure, curing the encapsulant, whereby the heat sink structure adheres to the encapsulant and singulating the encapsulated assembly to form a semiconductor package.

Abstract: A method of manufacturing a plurality of stacked die semiconductor packages, including: attaching a second silicon wafer to a first silicon wafer, wherein the second silicon wafer has a plurality of open vias; attaching a third silicon wafer to the second silicon wafer, wherein the third silicon wafer has a plurality of open vias, and the open vias of the second and third silicon wafers are aligned with one another; etching a bonding material that attaches the wafers from the aligned open vias; filling the aligned open vias with a conductor; forming conductive bumps at open ends of the aligned open vias; back grinding the first silicon wafer; separating the stacked semiconductor dies from each other; attaching the bump end of the stacked semiconductor dies onto a substrate; encapsulating the stacked semiconductor dies and substrate; and singulating the encapsulated assembly.

Abstract: Methods of fabricating a silicon oxide layer using an inorganic silicon precursor and methods of fabricating a semiconductor device using the same are provided. The methods of fabricating a semiconductor device include forming a tunnel insulating layer and a charge storage layer on a substrate; forming a dielectric layer structure on the charge storage layer using an atomic layer deposition (ALD) method, the dielectric layer structure including a first dielectric layer formed of silicon oxide, a second dielectric layer on the first dielectric layer formed of a material different from the material forming the first dielectric layer, and a third dielectric layer formed of the silicon oxide on the second dielectric layer; and forming a control gate on the dielectric layer structure.