Abstract: The present invention relates to a method for preparing a sulfide-based solid electrolyte, a sulfide-based solid electrolyte prepared by the method, and an all-solid-state lithium secondary battery including the sulfide-based solid electrolyte. The method of the present invention includes a) mixing Li2S with P2S5 to prepare a mixed powder, b) placing the mixed powder, an ether, and stirring balls in a container, sealing the container, followed by stirring to prepare a suspension, and c) stirring the suspension under high-temperature and high-pressure conditions to prepare sulfide-based solid particles.

Abstract: The present invention relates to a graphene-nanoparticle composite having a structure in which nanoparticles are crystallized in a carbon-based material, for example, graphene, at a high density, and, more particularly, to a graphene-nanoparticle composite capable of remarkably improving physical properties such as contact characteristics between basal planes of graphene and conductivity, wherein nanoparticles are included as a large amount of 30% by weight or more, based on 100% by weight of graphene, and crystallized nanoparticles have an average particle diameter of 200 nm or more, and a method of preparing the same.

Abstract: The present invention relates to a graphene-nanoparticle composite having a structure in which nanoparticles are crystallized at a high density in a carbon-based material, for example, graphene, and, more particularly, to a graphene-nanoparticle composite capable of remarkably improving physical properties such as contact characteristics between basal planes of graphene and conductivity since nanoparticles are included as a large amount of 20 to 50% by weight, based on 100% by weight of graphene, and a method of preparing the same.

Abstract: The present invention relates to a graphene-nanoparticle composite having a structure in which nanoparticles are crystallized at a high density in a carbon-based material, for example, graphene, and, more particularly, to a graphene-nanoparticle composite capable of remarkably improving physical properties such as contact characteristics between basal planes of graphene and conductivity since nanoparticles are included as a large amount of 20 to 50% by weight, based on 100% by weight of graphene, and a method of preparing the same.

Abstract: The present invention relates to a graphene-nanoparticle composite having a structure in which nanoparticles are crystallized in a carbon-based material, for example, graphene, at a high density, and, more particularly, to a graphene-nanoparticle composite capable of remarkably improving physical properties such as contact characteristics between basal planes of graphene and conductivity, wherein nanoparticles are included as a large amount of 30% by weight or more, based on 100% by weight of graphene, and crystallized nanoparticles have an average particle diameter of 200 nm or more, and a method of preparing the same.

Abstract: An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.

Abstract: Disclosed herein is a stator of a linear motor having a plurality of outer core blocks. Each of the outer core blocks comprises first and second side core blocks and a center core block. The center core block has an inner diameter equal to an outer diameter of a coil block. Consequently, insulation and heat transfer efficiencies are improved, and the size of the linear motor is minimized. Furthermore, the center core block is provided with a heat sink part, which is inserted in the coil block for dissipating heat from the coil block. Consequently, heat generated from the coil block is effectively dissipated.

Abstract: A method for classifying defects of an object includes irradiating lights having different polarizations onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different polarizations to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.

Abstract: An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.

Abstract: In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.

Abstract: An automated and integrated substrate inspecting apparatus for performing an EBR/EEW inspection, a defect inspection of patterns and reticle error inspection of a substrate includes a first stage for supporting a substrate; a first image acquisition unit for acquiring a first image of a peripheral portion of the substrate supported by the first stage; a second stage for supporting the substrate; a second image acquisition unit for acquiring a second image of the substrate supported by the second stage; a transfer robot for transferring the substrate between the first stage and the second stage; and a data processing unit, connected to the first image acquisition unit and the second image acquisition unit, for inspecting results of an edge bead removal process and an edge exposure process performed on the substrate using the first image, and for inspecting for defects of patterns formed on the substrate using the second image.

Abstract: For an automatic defect inspection of an edge exposure area of a wafer, an optical unit supplies a light beam onto the edge portion of a wafer and a detection unit detects light reflected from the edge portion. The detection unit converts the detected light into an electrical signal to transmit the electrical signal to a processing unit. The processing unit analyzes the electrical signal to measure the reflectivity of the edge portion, compares the measured reflectivity with a reference reflectivity, and calculates the width of the edge exposure area. The processing unit compares the calculated width with a reference width to detect any defect in the edge exposure area.

Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

Abstract: A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.

Abstract: In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.

Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

Abstract: In a method and an apparatus for inspecting defects on a substrate using a light beam, a light source irradiates light beams having different wavelengths onto the substrate. A detector detects first lights scattered from a surface of the substrate and second lights scattered from impurities on the substrate by irradiation of the light beams. An operation unit compares first intensities of the first lights with second intensities of the second lights in order to produce differential values therebetween, and selects a wavelength corresponding to a maximum value of the differential values. An inspection process for inspecting the defects on the substrate is performed using a light beam having the selected wavelength.

Abstract: A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.

Abstract: An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.

Abstract: A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.