Abstract: A multilayer electronic component including: a body including a dielectric layer and internal electrodes; and external electrodes disposed outside the body and connected to the internal electrodes, wherein 1.5?Hfs/Hfc?5.0 when the internal electrode includes hafnium (Hf), Hfc indicates an average Hf content (at %) in a center of the internal electrode, and Hfs indicates an average Hf content (at %) in the internal electrode, measured from the center of the internal electrode to an interface thereof in contact with the dielectric layer.

Abstract: Provided is a method of operating a terminal. The method includes determining a profile item applicable to the profile view for the account based on an input received by the terminal and a coordinate indicating a position where the profile item is provided on the profile view. The method includes displaying the profile item on a screen of the terminal based on the determined profile item and the determined coordinate. The method includes receiving an input related to the profile item, and displaying a visual effect corresponding to the input on the screen.

Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.

Abstract: A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.

Abstract: Disclosed is a metal oxide semiconductor gas sensor having a nanostructure, the metal oxide semiconductor gas sensor including: a substrate; a first electrode formed on the substrate; a gas sensing layer provided on the first electrode, made of a metal oxide semiconductor which has a nanostructure and of which electrical conductivity changes when the metal oxide semiconductor reacts with gas to be sensed, and formed by oblique angle deposition; a second electrode formed on the metal oxide semiconductor; and a control unit for measuring the electrical conductivity of the gas sensing layer to sense the gas by applying a predetermined amount of current through the first and the second electrodes.

Abstract: Provided is a method of manufacturing a nanowire array using induced growth, in which a nitride inorganic nanowire is grown from a nitride seed by forming the nitride seed on a sapphire or silicon substrate, forming an organic nanowire pattern and a dielectric nanotunnel using the nanowire pattern as a template on the nitride seed, and using the nanotunnel as an induced growth mask.

Abstract: Provided is a method of manufacturing a nanowire array using induced growth, in which a nitride inorganic nanowire is grown from a nitride seed by forming the nitride seed on a sapphire or silicon substrate, forming an organic nanowire pattern and a dielectric nanotunnel using the nanowire pattern as a template on the nitride seed, and using the nanotunnel as an induced growth mask.

Abstract: Disclosed is a metal oxide semiconductor gas sensor having a nanostructure, the metal oxide semiconductor gas sensor including: a substrate; a first electrode formed on the substrate; a gas sensing layer provided on the first electrode, made of a metal oxide semiconductor which has a nanostructure and of which electrical conductivity changes when the metal oxide semiconductor reacts with gas to be sensed, and formed by oblique angle deposition; a second electrode formed on the metal oxide semiconductor; and a control unit for measuring the electrical conductivity of the gas sensing layer to sense the gas by applying a predetermined amount of current through the first and the second electrodes.