Abstract: Disclosed are an amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane and a preparation method of the polyamide reverse osmosis composite membrane using the same. The amine aqueous solution comprises 0.1 to 20 wt % of a polyfunctional amine compound, 0.1 to 20 wt % of an alcohol amine compound, 0.1 to 20 wt % of a tertiary amine compound, and 40 to 99.7 wt % of water. Due to using an amine aqueous solution having an alcohol amine and a tertiary amine compound, the polyamide reverse osmosis composite membrane has high water permeability and enhanced salt rejection rate, and thus is useful for the membrane field.

Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.

Abstract: Disclosed herein is a spiral wound type filter cartridge and more specifically, a spiral wound type filter cartridge in which activated carbon fiber is provided. The inside of spiral wound type filter cartridge is capable of serving as a carbon filter in a water purifier, thus eliminating the necessity of the use of any carbon filter for pre- or post-treatment in the process of purifying raw water, reducing an overall size of the water purifier and considerably reducing costs associated therewith.

Abstract: An array substrate for a liquid crystal display device includes a plurality of gate lines on a substrate; a plurality of data lines crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor connected to one of the plurality of gate lines and one of the plurality of data lines and disposed in one pixel region of the plurality of pixel regions; first and second shield patterns respectively extending from a previous gate line of the plurality of gate lines to the one pixel region, the first shield pattern disposed at one side of the one pixel region, and the second shield pattern disposed at the other side of the one pixel region; and a pixel electrode in the one pixel region and over the thin film transistor, the pixel electrode overlapping the first and second shield patterns and the previous gate line.

Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.

Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.

Abstract: A thin film transistor (TFT) substrate for a liquid crystal display is provided. The thin film transistor substrate includes: a plurality of gate lines and a plurality of data lines that cross each other and define a plurality of sub-pixels; and a plurality of unit pixels in which first and second unit pixels are alternately formed in a direction of the gate lines and first and second unit pixels are formed vertically in a direction of the data lines, wherein the first unit pixel includes three sub-pixels and the first electrodes are slanted with respect to the gate lines and the data lines in each sub-pixel, the second unit pixel includes three sub-pixels and the second electrodes are a slanted with respect to the gate lines and the data lines in each sub-pixel, and the slant of the second electrodes is symmetrical to the slant of the first electrodes.

Abstract: An amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane is prepared, which consists of 0.1 through 20 weight % of polyfunctional aromatic amine monomer, 0.1 through 20 weight % of multi-functional tertiary alcohol amine, 0.1 through 20 weight % of strong acid, and 40 through 99.7 weight % of water.

Abstract: Disclosed are an amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane and a preparation method of the polyamide reverse osmosis composite membrane using the same. The amine aqueous solution comprises 0.1 to 20 wt % of a polyfunctional amine compound, 0.1 to 20 wt % of an alcohol amine compound, 0.1 to 20 wt % of a tertiary amine compound, and 40 to 99.7 wt % of water. Due to using an amine aqueous solution having an alcohol amine and a tertiary amine compound, the polyamide reverse osmosis composite membrane has high water permeability and enhanced salt rejection rate, and thus is useful for the membrane field.

Abstract: A preparation method of a polyamide thin film composite reverse osmosis membrane and a polyamide thin film composite reverse osmosis membrane prepared using the preparation method are provided. The preparation method of a polyamide thin film composite reverse osmosis membrane using interfacial polymerization of an amine aqueous solution and amine-reactive compound includes the steps of (a) forming an active layer through interfacial polymerization by contacting a surface of a porous support with an amine aqueous solution containing a polyfunctional aromatic amine monomer and an organic solution containing polyfunctional acyl halide monomer as an amine-reactive compound, and (b) performing post-treatment preceded by the forming of the active layer by contacting the active layer with an aqueous solution containing 0.1 to 100 wt % of polyfunctional tertiary alcohol amine.

Abstract: A method of manufacturing an electronic device, which can obtain sufficient manufacturing margins and reduce a defect rate by compensating for a threshold voltage variation caused by the variation of a critical dimension (CD) of a gate electrode. An ion implanter controller and an ion implantation system perform the method. In the method, an ion implantation recipe for forming a junction contact plug of a transistor formed on the wafer is adjusted based on the measured CD. Then, ions are implanted into the wafer by using the adjusted ion implantation recipe. All defects that may occur in the transistor during previous manufacturing steps can be repaired after the transistor is formed, thus enhancing manufacturing margins.

Abstract: An amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane is prepared, which consists of 0.1 through 20 weight % of polyfunctional aromatic amine monomer, 0.1 through 20 weight % of multi-functional tertiary alcohol amine, 0.1 through 20 weight % of strong acid, and 40 through 99.7 weight % of water.

Abstract: A preparation method of a polyamide thin film composite reverse osmosis membrane and a polyamide thin film composite reverse osmosis membrane prepared using the preparation method are provided. The preparation method of a polyamide thin film composite reverse osmosis membrane using interfacial polymerization of an amine aqueous solution and amine-reactive compound includes the steps of (a) forming an active layer through interfacial polymerization by contacting a surface of a porous support with an amine aqueous solution containing a polyfunctional aromatic amine monomer and an organic solution containing polyfunctional acyl halide monomer as an amine-reactive compound, and (b) performing post-treatment preceded by the forming of the active layer by contacting the active layer with an aqueous solution containing 0.1 to 100 wt % of polyfunctional tertiary alcohol amine.

Abstract: A liquid crystal display device is disclosed. The disclosed device includes a first substrate including a plurality of gate and data lines defining a plurality of pixel regions, heating conductive lines having first conductive lines formed substantially in parallel with the gate lines and second conductive lines formed substantially in parallel with the data lines, thin film transistors (TFT) connected to the corresponding gate lines and data lines, and pixel electrodes connected to the corresponding TFTs. The disclosed device also includes a second substrate including a plurality of color filters formed corresponding to the pixel regions, and a liquid crystal layer between the first substrate and the second substrate. At least one of the second conductive lines is separated from at least one of the first conductive lines.

Abstract: An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.

Abstract: A shift register having an amorphous silicon thin film transistor for decreasing a distortion of the output signal is disclosed. In the shift register having a plurality of stages for shifting an input signal using first and second driving voltages, first and second clock signals and a start pulse, each of said plurality of stages includes an output buffer for selectively applying any one of the first and second clock signals and the second driving voltage to an output line under control of first and second nodes; a pre-charger for pre-charging the first driving voltage into the first node in response to said start pulse; a second node controller for selectively supplying the first and second driving voltages to the second node in such a manner to be opposite to the first node using said start pulse and an output signal of the next stage; and a first node controller for supplying the second driving voltage to the first node in a time interval excluding the time interval for said pre-charging.

Abstract: There is provided an LCD (liquid crystal display device) having a function of temperature maintenance. The LCD includes: a liquid crystal panel having a common heating electrode and a temperature detection unit formed in a predetermined region of the liquid crystal panel, for detecting a temperature of the liquid crystal panel and controlling a current applied to the common heating electrode.

Abstract: A liquid crystal display device includes a liquid crystal display panel having an effective area and a non-display area, and a temperature sense pattern provided within the non-display area of the liquid crystal display panel.

Abstract: A thin film transistor (TFT) substrate for a liquid crystal display is provided. The thin film transistor substrate includes: a plurality of gate lines and a plurality of data lines that cross each other and define a plurality of sub-pixels; and a plurality of unit pixels in which first and second unit pixels are alternately formed in a direction of the gate lines and first and second unit pixels are formed vertically in a direction of the data lines, wherein the first unit pixel includes three sub-pixels and the first electrodes are slanted with respect to the gate lines and the data lines in each sub-pixel, the second unit pixel includes three sub-pixels and the second electrodes are a slanted with respect to the gate lines and the data lines in each sub-pixel, and the slant of the second electrodes is symmetrical to the slant of the first electrodes.

Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.