Abstract: A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.

Abstract: A method for monitoring an ion implanter includes positioning a substrate behind an interceptor for intercepting a portion of an ion beam to be irradiated toward the substrate, irradiating a first ion beam toward the substrate to form a first shadow on the substrate, rotating the substrate about a central axis of the substrate, irradiating a second ion beam toward the substrate to form a second shadow on the substrate, and measuring a dosage of ions implanted into the substrate to monitor whether the rotation of the substrate has been normally performed. Preferably, a dosage of ions implanted into the substrate is calculated from a thermal wave value of the substrate and whether the rotation of the substrate has been normally performed is monitored by comparing the thermal wave value corresponding to the first shadow with a reference thermal wave value.

Abstract: An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.

Abstract: A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.

Abstract: A method and an apparatus for analyzing a portion of a sample, such as a minute pattern formed on a semiconductor substrate, by employing a Fast Fourier Transformation (FFT) method, in which a magnified image of a region of a sample to be analyzed is generated and converted into data having a frequency by the FFT method. The converted data are analyzed to determine whether the region of the sample is normal or abnormal. It is possible to measure and analyze the sample simultaneously and automatically by using the apparatus in accordance with the method for analyzing the sample.

Abstract: An automated and integrated substrate inspecting apparatus for performing an EBR/EEW inspection, a defect inspection of patterns and reticle error inspection of a substrate includes a first stage for supporting a substrate; a first image acquisition unit for acquiring a first image of a peripheral portion of the substrate supported by the first stage; a second stage for supporting the substrate; a second image acquisition unit for acquiring a second image of the substrate supported by the second stage; a transfer robot for transferring the substrate between the first stage and the second stage; and a data processing unit, connected to the first image acquisition unit and the second image acquisition unit, for inspecting results of an edge bead removal process and an edge exposure process performed on the substrate using the first image, and for inspecting for defects of patterns formed on the substrate using the second image.

Abstract: Two radio systems are provided for each coverage area within a wireless communications system, each radio system supporting a different wireless communications standard with at least one of the standards being compatible with the other (such as the backward-compatibility of either of 1xEV-DO or 1xEV-DV with IS-2000). Both of the radio systems may have a sectored configuration for selected coverage areas while a combination of sectored and omni configurations are employed for the radio systems for other coverage areas. When communications with a mobile station utilizing one standard fails within a coverage area due to antenna, radio frequency path, or radio system failure, wireless communications with that mobile station is automatically resumed utilizing the other, compatible wireless communications standard.

Abstract: An organopolysiloxane composition is provided, which has improved adhesive property with vulcanized silicone rubbers and high resistance to abrasion and friction, and can be used as a printing ink for rubber articles. The organopolysiloxane composition includes an organopolysiloxane having at least two Si-bonded vinyl radicals, an organopolysiloxane having at least three Si-bonded hydrogen atoms, an adhesion promoter containing organotitanium compound, a platinum catalyst and a reinforcing filler.

Abstract: A wafer transfer blade in a wafer transfer arm employed for a semiconductor device manufacturing process, includes a flat region whereon a wafer is loaded; and an end region being integral with the flat region and having a rounded side surface so as to deflect impact on the wafer when colliding with the transfer blade, to thereby reduce wafer edge chipping.

Abstract: A method for manufacturing a semiconductor device comprises the steps of extracting an optimal working condition by accumulatively averaging accumulated working conditions of lots previously performed in an expectation process to be currently performed in the manufacturing equipment, extracting a correction condition by extracting information for an alignment state of a lower layer performed by the expectation process, and setting the working condition by adding the correction condition to the optimal working condition.

Abstract: A water purifier includes a replaceable pre-processing filter, a washable membrane, and a replaceable post-processing filter through which potable water is sequentially conducted. A controller determines a total use time of the filters and membrane and compares the total use time with a reference time for replacement of the filters and washing of the membrane. When the total use time for the filters has reached the reference time, visual and audio indicators are activated. When the total use time for the membrane has reached the reference time, a valve is actuated which permits potable water to flow across and clean the membrane and then be discharged to waste.