Patents by Inventor Sun Young Lim

Sun Young Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12468445
    Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
    Type: Grant
    Filed: January 9, 2024
    Date of Patent: November 11, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Mu-Tien Chang, Dimin Niu, Hongzhong Zheng, Sun Young Lim, Indong Kim, Jangseok Choi
  • Patent number: 12230356
    Abstract: A memory device including a plurality of nonvolatile memory chips each including a status output pin and a buffer chip configured to receive a plurality of internal state signals, which indicate states of the plurality of nonvolatile memory chips, from the status output pins and output an external state signal having a set period on the basis of the internal state signals indicating a particular state, wherein in a first section of the external state signal having the set period, a duty cycle of the external state signal determines depending on an identification (ID) of the nonvolatile memory chip which outputs the internal state signal indicating the particular state among the plurality of nonvolatile memory chips.
    Type: Grant
    Filed: October 30, 2023
    Date of Patent: February 18, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sun Young Lim, Seung Yong Shin, Hyun Duk Cho
  • Publication number: 20250036584
    Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
    Type: Application
    Filed: October 16, 2024
    Publication date: January 30, 2025
    Inventors: Dimin NIU, Mu-Tien CHANG, Hongzhong ZHENG, Sun Young LIM, Indong KIM, Jangseok CHOI, Craig HANSON
  • Patent number: 12189546
    Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: January 7, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dimin Niu, Mu-Tien Chang, Hongzhong Zheng, Sun Young Lim, Indong Kim, Jangseok Choi, Craig Hanson
  • Patent number: 12147360
    Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: November 19, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dimin Niu, Mu-Tien Chang, Hongzhong Zheng, Sun Young Lim, Indong Kim, Jangseok Choi, Craig Hanson
  • Patent number: 12032828
    Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: July 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Mu-Tien Chang, Dimin Niu, Hongzhong Zheng, Sun Young Lim, Indong Kim, Jangseok Choi
  • Publication number: 20240143173
    Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
    Type: Application
    Filed: January 9, 2024
    Publication date: May 2, 2024
    Inventors: Mu-Tien CHANG, Dimin NIU, Hongzhong ZHENG, Sun Young LIM, Indong KIM, Jangseok CHOI
  • Publication number: 20240062790
    Abstract: A memory device including a plurality of nonvolatile memory chips each including a status output pin and a buffer chip configured to receive a plurality of internal state signals, which indicate states of the plurality of nonvolatile memory chips, from the status output pins and output an external state signal having a set period on the basis of the internal state signals indicating a particular state, wherein in a first section of the external state signal having the set period, a duty cycle of the external state signal determines depending on an identification (ID) of the nonvolatile memory chip which outputs the internal state signal indicating the particular state among the plurality of nonvolatile memory chips.
    Type: Application
    Filed: October 30, 2023
    Publication date: February 22, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sun Young LIM, Seung Yong SHIN, Hyun Duk CHO
  • Patent number: 11837317
    Abstract: A memory device including a plurality of nonvolatile memory chips each including a status output pin and a buffer chip configured to receive a plurality of internal state signals, which indicate states of the plurality of nonvolatile memory chips, from the status output pins and output an external state signal having a set period on the basis of the internal state signals indicating a particular state, wherein in a first section of the external state signal having the set period, a duty cycle of the external state signal determines depending on an identification (ID) of the nonvolatile memory chip which outputs the internal state signal indicating the particular state among the plurality of nonvolatile memory chips.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: December 5, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sun Young Lim, Seung Yong Shin, Hyun Duk Cho
  • Publication number: 20220358060
    Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Inventors: Dimin NIU, Mu-Tien CHANG, Hongzhong ZHENG, Sun Young LIM, lndong KIM, Jangseok CHOI, Craig HANSON
  • Patent number: 11397698
    Abstract: A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: July 26, 2022
    Inventors: Dimin Niu, Mu-Tien Chang, Hongzhong Zheng, Sun Young Lim, Indong Kim, Jangseok Choi, Craig Hanson
  • Publication number: 20220229551
    Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
    Type: Application
    Filed: April 4, 2022
    Publication date: July 21, 2022
    Inventors: Mu-Tien CHANG, Dimin NIU, Hongzhong ZHENG, Sun Young LIM, Indong KIM, Jangseok CHOI
  • Publication number: 20220172753
    Abstract: A memory device including a plurality of nonvolatile memory chips each including a status output pin and a buffer chip configured to receive a plurality of internal state signals, which indicate states of the plurality of nonvolatile memory chips, from the status output pins and output an external state signal having a set period on the basis of the internal state signals indicating a particular state, wherein in a first section of the external state signal having the set period, a duty cycle of the external state signal determines depending on an identification (ID) of the nonvolatile memory chip which outputs the internal state signal indicating the particular state among the plurality of nonvolatile memory chips.
    Type: Application
    Filed: August 23, 2021
    Publication date: June 2, 2022
    Inventors: Sun Young LIM, Seung Yong SHIN, Hyun Duk CHO
  • Patent number: 11294571
    Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: April 5, 2022
    Inventors: Mu-Tien Chang, Dimin Niu, Hongzhong Zheng, Sun Young Lim, Indong Kim, Jangseok Choi
  • Patent number: 11029879
    Abstract: A method of page size aware scheduling and a non-transitory computer-readable storage medium having recorded thereon a computer program for executing the method of page size aware scheduling are provided. The method includes determining a size of a media page; determining if the media page is open or closed; performing, by a memory controller, a speculative read operation if the media page is determined to be open; and performing, by the memory controller, a regular read operation if the media page is determined to be closed.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: June 8, 2021
    Inventors: Dimin Niu, Mu Tien Chang, Hongzhong Zheng, Sun Young Lim, Jae-Gon Lee, Indong Kim
  • Patent number: 10810144
    Abstract: A method includes: providing a DDR interface between a host memory controller and a memory module; and providing a message interface between the host memory controller and the memory module. The memory module includes a non-volatile memory and a DRAM configured as a DRAM cache of the non-volatile memory. Data stored in the non-volatile memory of the memory module is asynchronously accessible by a non-volatile memory controller of the memory module, and data stored in the DRAM cache is directly and synchronously accessible by the host memory controller.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: October 20, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun Young Lim, Mu-Tien Chang, Dimin Niu, Hongzhong Zheng, Indong Kim
  • Publication number: 20200218447
    Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
    Type: Application
    Filed: March 13, 2020
    Publication date: July 9, 2020
    Inventors: Mu-Tien CHANG, Dimin NIU, Hongzhong ZHENG, Sun Young LIM, Indong KIM, Jangseok CHOI
  • Publication number: 20200167297
    Abstract: A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
    Type: Application
    Filed: January 30, 2020
    Publication date: May 28, 2020
    Inventors: Dimin NIU, Mu-Tien CHANG, Hongzhong ZHENG, Sun Young LIM, lndong KIM, Jangseok CHOI, Craig HANSON
  • Patent number: 10621119
    Abstract: A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: April 14, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dimin Niu, Mu-Tien Chang, Hongzhong Zheng, Sun Young Lim, Indong Kim, Jangseok Choi, Craig Hanson
  • Patent number: 10592114
    Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: March 17, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Mu-Tien Chang, Dimin Niu, Hongzhong Zheng, Sun Young Lim, Indong Kim, Jangseok Choi