Abstract: The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0<L?0.8; 0<M?0.2; 0<L?0.35; and L+M+N=1; and, wherein R1, R2 and R3 are independently selected from C1-C6 alkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material.