Abstract: A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

Abstract: A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

Abstract: A polymer resin composition, a method for forming a pattern using the polymer resin composition, and a method for fabricating a capacitor using the polymer resin composition are disclosed. The polymer resin composition includes about 75 to 93 percent by weight of a copolymer prepared from benzyl methacrylate, methacrylic acid, and hydroxyethyl methacrylate; about 1 to 7 percent by weight of a cross-linking agent; about 0.01 to 0.5 percent by weight of a thermal acid generator; about 0.01 to 1 percent by weight of a photoacid generator; about 0.00001 to 0.001 percent by weight of an organic base; and a solvent.

Abstract: The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0<L?0.8; 0<M?0.2; 0<L?0.35; and L+M+N=1; and, wherein R1, R2 and R3 are independently selected from C1-C6 alkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material.

Abstract: A method of forming a blocking pattern includes forming a preliminary blocking layer on first and second regions of a substrate, the preliminary blocking layer being formed of a photosensitive composition including a siloxane polymer, a cross-linking agent, a photoacid generator, and a thermal acid generator, selectively exposing to light a first portion of the preliminary blocking layer, the first portion of the preliminary blocking layer being formed on the first region of the substrate, such that a cross-linked pattern is formed on the first region of the substrate, and removing a second portion of the preliminary blocking layer, the second portion of the preliminary blocking layer being formed on the second region of the substrate.

Abstract: The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0<L?0.8; 0<M?0.25; 0<N?0.35; and L+M+N=1; and, wherein R1, R2 and R3 are independently selected from C1-C6 alkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material.

Abstract: A polymer resin composition, a method for forming a pattern using the polymer resin composition, and a method for fabricating a capacitor using the polymer resin composition are disclosed. The polymer resin composition includes about 75 to 93 percent by weight of a copolymer prepared from benzyl methacrylate, methacrylic acid, and hydroxyethyl methacrylate; about 1 to 7 percent by weight of a cross-linking agent; about 0.01 to 0.5 percent by weight of a thermal acid generator; about 0.01 to 1 percent by weight of a photoacid generator; about 0.00001 to 0.001 percent by weight of an organic base; and a solvent.

Abstract: The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0<L?0.8; 0<M?0.25; 0<N?0.35; and L+M+N=1; and, wherein R1, R2 and R3 are independently selected from C1-C6 alkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material.