Abstract: A method for forming a tin-containing film on a substrate comprises: exposing the substrate to a vapor or a liquid of a film-forming composition that comprises a tin-containing precursor having the general formula: (R3Sn)2NR?, wherein R and R? each are independently H, a C1 to C6 linear, branched or cyclic alkyl group, or a C1 to C4 linear, branched or cyclic saturated hydrofluorocarbon group, and depositing at least part of the tin-containing precursor onto the substrate to form the tin-containing film using a deposition method. The exemplary tin-containing precursors include (Me3Sn)2NMe, (Me3Sn)2NEt, (Me3Sn)2N(nPr), (Me3Sn)2N(nBu) and (Me3Sn)2N(CH2CF3).

Abstract: A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

Abstract: This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors, by depositing Metal Oxides Layer, by ALD or CVD. Metals discussed here are IVA-VIA elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W). The film needs to be thin, possibly discontinuous, and lithium ion conductive enough, so that the addition of this thin film interface allows fast lithium ion transfer at the interface between electrode and electrolyte.

Abstract: Methods for forming a Li-containing film, islet or cluster on a substrate comprise the steps of introducing a vapor of a silicon-free lithium precursor into a reactor and depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or cluster using a vapor deposition method.

Abstract: A method for forming a tin-containing film on a substrate comprises: exposing the substrate to a vapor or a liquid of a film-forming composition that comprises a tin-containing precursor having the general formula: (R3Sn)2NR?, wherein R and R? each are independently H, a C1 to C6 linear, branched or cyclic alkyl group, or a C1 to C4 linear, branched or cyclic saturated hydrofluorocarbon group. and depositing at least part of the tin-containing precursor onto the substrate to form the tin-containing film using a deposition method. The exemplary tin-containing precursors include (Me3Sn)2NMe, (Me3Sn)2NEt, (Me3Sn)2N(nPr), (Me3Sn)2N(nBu) and (Me3Sn)2N(CH2CF3).

Abstract: This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors, by depositing Metal Oxides Layer, by ALD or CVD. Metals discussed here are IVA-VIA elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W). The film needs to be thin, possibly discontinuous, and lithium ion conductive enough, so that the addition of this thin film interface allows fast lithium ion transfer at the interface between electrode and electrolyte.

Abstract: Methods for forming a Li-containing film, islet or cluster on a substrate comprise the steps of introducing a vapor of a silicon-free lithium precursor into a reactor and depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or cluster using a vapor deposition method.

Abstract: This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors, by depositing Doped-Metal Oxides Layer, by ALD or CVD. Metals discussed here arm IVA-VIA elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W) and dopants includes her B, Al, C, Si, N, P, S, allowing the oxide network to be porous, which may be favored by the presence of the dopant. The film also needs to be thin, possibly discontinuous, and lithium ion conductive enough, so that the addition of this thin film interface allows fast lithium ion transfer at the interface between electrode and electrolyte.

Abstract: A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.