Abstract: A thermal head includes a heat storage layer disposed on a substrate surface by lamination, a plurality of heating elements disposed on the heat storage layer, a plurality of individual electrodes, each connected individually to one end-portion of a heating element in the length direction of the resistance, and a common electrode electrically connected to the other end-portions of all heating elements in the length direction of the resistance, wherein the above-described substrate is a Si substrate having a resistivity of 20 m?·cm or less, the Si substrate is provided with an exposure region including no heat storage layer, and a contact portion is disposed on the exposure region, so as to keep the common electrode and the Si substrate surface in ohmic contact.

Abstract: A thermal head includes a heat storage layer disposed on a substrate surface by lamination, a plurality of heating elements disposed on the heat storage layer, a plurality of individual electrodes, each connected individually to one end-portion of a heating element in the length direction of the resistance, and a common electrode electrically connected to the other end-portions of all heating elements in the length direction of the resistance, wherein the above-described substrate is a Si substrate having a resistivity of 20 m?·cm or less, the Si substrate is provided with an exposure region including no heat storage layer, and a contact portion is disposed on the exposure region, so as to keep the common electrode and the Si substrate surface in ohmic contact.