Patents by Inventor Sun Dae Kim
Sun Dae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10643958Abstract: Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.Type: GrantFiled: October 12, 2018Date of Patent: May 5, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun-dae Kim, Hyung-gil Baek, Yun-rae Cho, Nam-gyu Baek
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Patent number: 10490514Abstract: The semiconductor devices may include a semiconductor substrate, and a guard ring and a crack sensing circuit on the semiconductor substrate. The semiconductor substrate may include a main chip region that is defined by the guard ring and includes the crack sensing circuit, a central portion of the main chip region surrounded by the crack sensing circuit, and a chamfer region that is in a corner portion of the main chip region and is defined by the guard ring and the crack sensing circuit. The semiconductor devices may also include at least one gate structure on the semiconductor substrate in the main chip region, a plurality of metal pattern structures on the at least one gate structure in the chamfer region, and an insulating layer on the plurality of metal pattern structures. The plurality of metal pattern structures may extend in parallel to one another and may have different lengths.Type: GrantFiled: April 12, 2019Date of Patent: November 26, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Nam-Gyu Baek, Yun-Rae Cho, Hyung-Gil Baek, Sun-Dae Kim
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Publication number: 20190237414Abstract: The semiconductor devices may include a semiconductor substrate, and a guard ring and a crack sensing circuit on the semiconductor substrate. The semiconductor substrate may include a main chip region that is defined by the guard ring and includes the crack sensing circuit, a central portion of the main chip region surrounded by the crack sensing circuit, and a chamfer region that is in a corner portion of the main chip region and is defined by the guard ring and the crack sensing circuit. The semiconductor devices may also include at least one gate structure on the semiconductor substrate in the main chip region, a plurality of metal pattern structures on the at least one gate structure in the chamfer region, and an insulating layer on the plurality of metal pattern structures. The plurality of metal pattern structures may extend in parallel to one another and may have different lengths.Type: ApplicationFiled: April 12, 2019Publication date: August 1, 2019Inventors: NAM-GYU BAEK, YUN-RAE CHO, HYUNG-GIL BAEK, SUN-DAE KIM
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Patent number: 10304781Abstract: The semiconductor devices may include a semiconductor substrate, and a guard ring and a crack sensing circuit on the semiconductor substrate. The semiconductor substrate may include a main chip region that is defined by the guard ring and includes the crack sensing circuit, a central portion of the main chip region surrounded by the crack sensing circuit, and a chamfer region that is in a corner portion of the main chip region and is defined by the guard ring and the crack sensing circuit. The semiconductor devices may also include at least one gate structure on the semiconductor substrate in the main chip region, a plurality of metal pattern structures on the at least one gate structure in the chamfer region, and an insulating layer on the plurality of metal pattern structures. The plurality of metal pattern structures may extend in parallel to one another and may have different lengths.Type: GrantFiled: March 15, 2017Date of Patent: May 28, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Nam-gyu Baek, Yun-rae Cho, Hyung-gil Baek, Sun-dae Kim
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Publication number: 20190043813Abstract: Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.Type: ApplicationFiled: October 12, 2018Publication date: February 7, 2019Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun-dae KIM, Hyung-gil BAEK, Yun-rae CHO, Nam-gyu BAEK
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Patent number: 10103109Abstract: Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.Type: GrantFiled: March 2, 2017Date of Patent: October 16, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun-dae Kim, Hyung-gil Baek, Yun-rae Cho, Nam-gyu Baek
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Patent number: 9984945Abstract: A semiconductor chip may include a semiconductor substrate and a crack detection circuit. The semiconductor substrate may include a circuit structure. The crack detection circuit may include main lines and a chamfer lines. The main lines may be formed in the semiconductor substrate to surround the circuit structure. The chamfer lines may be formed in corners of the semiconductor substrate. The chamfer lines may be connected between the main lines. A first angle may be formed between each of the chamfer lines and any one of the two main lines perpendicular to each other. A second angle wider than the first angle may be formed between each of the chamfer lines and the other main line.Type: GrantFiled: July 26, 2016Date of Patent: May 29, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-Rae Cho, Sun-Dae Kim, Nam-Gyu Baek, Hyung-Gil Baek
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Publication number: 20170345773Abstract: The semiconductor devices may include a semiconductor substrate, and a guard ring and a crack sensing circuit on the semiconductor substrate. The semiconductor substrate may include a main chip region that is defined by the guard ring and includes the crack sensing circuit, a central portion of the main chip region surrounded by the crack sensing circuit, and a chamfer region that is in a corner portion of the main chip region and is defined by the guard ring and the crack sensing circuit. The semiconductor devices may also include at least one gate structure on the semiconductor substrate in the main chip region, a plurality of metal pattern structures on the at least one gate structure in the chamfer region, and an insulating layer on the plurality of metal pattern structures. The plurality of metal pattern structures may extend in parallel to one another and may have different lengths.Type: ApplicationFiled: March 15, 2017Publication date: November 30, 2017Inventors: Nam-gyu BAEK, Yun-rae Cho, Hyung-gil Baek, Sun-dae Kim
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Publication number: 20170317035Abstract: Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.Type: ApplicationFiled: March 2, 2017Publication date: November 2, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun-dae Kim, Hyung-gil Baek, Yun-rae Cho, Nam-gyu Baek
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Publication number: 20170062293Abstract: A semiconductor chip may include a semiconductor substrate and a crack detection circuit. The semiconductor substrate may include a circuit structure. The crack detection circuit may include main lines and a chamfer lines. The main lines may be formed in the semiconductor substrate to surround the circuit structure. The chamfer lines may be formed in corners of the semiconductor substrate. The chamfer lines may be connected between the main lines. A first angle may be formed between each of the chamfer lines and any one of the two main lines perpendicular to each other. A second angle wider than the first angle may be formed between each of the chamfer lines and the other main line. Thus, although a crack may be generated in the corner of the semiconductor substrate by twice cutting processes of a wafer, the crack detection circuit may not detect the crack.Type: ApplicationFiled: July 26, 2016Publication date: March 2, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Yun-Rae Cho, Sun-Dae Kim, Nam-Gyu Baek, Hyung-Gil Baek
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Patent number: 9570411Abstract: A pad structure usable with a semiconductor device may include an insulating layer pattern structure, a plug, and a pad. The insulating layer pattern structure has a plug hole and at least one via hole. The plug is formed in the plug hole. The pad is formed on the insulating layer pattern structure. The pad is electrically connected with the plug and has a lower surface and an uneven upper surface. The lower surface includes a protruded portion inserted into the via hole. The uneven upper surface includes a recessed portion and an elevated portion—to provide high roughness and firm connection.Type: GrantFiled: October 23, 2015Date of Patent: February 14, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam-Gyu Baek, Young-Min Lee, Yun-Rae Cho, Sun-Dae Kim
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Publication number: 20160043045Abstract: A pad structure usable with a semiconductor device may include an insulating layer pattern structure, a plug, and a pad. The insulating layer pattern structure has a plug hole and at least one via hole. The plug is formed in the plug hole. The pad is formed on the insulating layer pattern structure. The pad is electrically connected with the plug and has a lower surface and an uneven upper surface. The lower surface includes a protruded portion inserted into the via hole. The uneven upper surface includes a recessed portion and an elevated portion—to provide high roughness and firm connection.Type: ApplicationFiled: October 23, 2015Publication date: February 11, 2016Inventors: Nam-Gyu BAEK, Young-Min LEE, Yun-Rae CHO, Sun-Dae KIM
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Publication number: 20150368280Abstract: An acrylic compound is represented by Formula 1. In Formula 1, R1 and R2 are each independently a C2 to C10 alkylene group, a C6 to C20 arylene group, a C7 to C20 alkylarylene group, or a C7 to C20 arylalkylene group. Ar1 is a C6 to C10 aryl group. X1 and X2 are each independently —O— or —S—. Y1 and Y2 are each independently a hydrogen atom, —OH, —SH, —NH2, and at least one of Y1 and Y2 is n1, n2, n3 and n4 are each independently 1 to 4 on average. The acrylic compound includes no halogen atoms and has a high refractive index of about 1.65 or greater.Type: ApplicationFiled: June 23, 2015Publication date: December 24, 2015Inventors: Hyun Seok Kim, Yong Hee Kang, Sun Dae Kim, Jin Woo Kim
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Publication number: 20150073156Abstract: The present invention relates to a production method of ?-methylene lactone which comprises the following steps: (A) a step of producing an enolate intermediate by making lactone react with alkyl formate under the presence of an alkoxide base; and (B) making the enolate intermediate react with paraformaldehyde. The production method of the present invention is capable of reducing the process time, improving yield, and minimizing the contamination of a reactor.Type: ApplicationFiled: July 20, 2012Publication date: March 12, 2015Inventors: Myung Ryul Lee, Sun Dae Kim, In Sik Jeon, Won Gi Lee, Sung Hee Ahn, Sang Hyun Hong
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Publication number: 20140296461Abstract: An aromatic vinyl copolymer can exhibit excellent heat resistance and/or transparency and is a copolymer of a monomer mixture, which includes: an exo-methylene butyrolactone compound represented by Formula 1; an aromatic vinyl compound; and a vinyl cyanide compound. wherein R1 and R2 are each independently hydrogen, C1 to C12 alkyl, or C6 to C12 aryl.Type: ApplicationFiled: March 24, 2014Publication date: October 2, 2014Applicant: Cheil Industries Inc.Inventors: Beom Jun JOO, Sun Dae KIM
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Publication number: 20130338381Abstract: A crude reaction product includes: (A) about 90 to 100% by weight of a dianhydro sugar alcohol in a solid form and (B) about 0 to about 10% by weight of a reaction byproduct in a solid form. The reaction product is prepared by the steps of (a) preparing a monoanhydro sugar alcohol by reacting a sugar alcohol in the presence of a first cyclization catalyst and (b) preparing a dianhydro sugar alcohol by reacting the monoanhydro sugar alcohol in the presence of a second catalyst.Type: ApplicationFiled: March 13, 2013Publication date: December 19, 2013Applicant: CHEIL INDUSTRIES INC.Inventors: Man Suk Kim, Sun Dae Kim, Sung Hee Ahn, Sang Hyun Hong