Patents by Inventor Sundar Srinivasan Chetlur
Sundar Srinivasan Chetlur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7151059Abstract: A reduced feature size MOS transistor and its method of manufacture is disclosed. The present invention reduces short channel effects but does not include an LDD structure In an illustrative embodiment, a MOS transistor has a gate length of 1.25 ?m or less. The exemplary MOS transistor includes a gate oxide that forms a planar and substantially stress free interface with a substrate. As a result of the planarity and substantially stress free nature of the oxide/substrate interface, the incidence of hot carriers, and thereby, deleterious hot carrier effects are reduced. By eliminating the use of the LDD structure, fabrication complexity is reduced and series source-drain resistance is reduced resulting in improved drive current and switching speed.Type: GrantFiled: January 22, 2004Date of Patent: December 19, 2006Assignee: Agere Systems Inc.Inventors: Samir Chaudhry, Sidhartha Sen, Sundar Srinivasan Chetlur, Richard William Gregor, Pradip Kumar Roy
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Patent number: 7148153Abstract: A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.Type: GrantFiled: December 11, 2002Date of Patent: December 12, 2006Assignee: Agere Systems Inc.Inventors: Yuanning Chen, Sundar Srinivasan Chetlur, Pradip Kumar Roy
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Publication number: 20040150014Abstract: A reduced feature size MOS transistor and its method of manufacture is disclosed. The present invention reduces short channel effects but does not include an LDD structure In an illustrative embodiment, a MOS transistor has a gate length of 1.25 &mgr;m or less. The exemplary MOS transistor includes a gate oxide that forms a planar and substantially stress free interface with a substrate. As a result of the planarity and substantially stress free nature of the oxide/substrate interface, the incidence of hot carriers, and thereby, deleterious hot carrier effects are reduced. By eliminating the use of the LDD structure, fabrication complexity is reduced and series source-drain resistance is reduced resulting in improved drive current and switching speed.Type: ApplicationFiled: January 22, 2004Publication date: August 5, 2004Inventors: Samir Chaudhry, Sidhartha Sen, Sundar Srinivasan Chetlur, Richard William Gregor, Pradip Kumar Roy
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Patent number: 6740912Abstract: A reduced feature size MOS transistor and its method of manufacture is disclosed. The present invention reduces short channel effects but does not include an LDD structure In an illustrative embodiment, a MOS transistor has a gate length of 1.25 &mgr;m or less. The exemplary MOS transistor includes a gate oxide that forms a planar and substantially stress free interface with a substrate. As a result of the planarity and substantially stress free nature of the oxide/substrate interface, the incidence of hot carriers, and thereby, deleterious hot carrier effects are reduced. By eliminating the use of the LDD structure, fabrication complexity is reduced and series source-drain resistance is reduced resulting in improved drive current and switching speed.Type: GrantFiled: June 20, 2000Date of Patent: May 25, 2004Assignee: Agere Systems Inc.Inventors: Samir Chaudhry, Sidharta Sen, Sundar Srinivasan Chetlur, Richard William Gregor, Pradip Kumar Roy
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Publication number: 20030143863Abstract: A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.Type: ApplicationFiled: February 7, 2003Publication date: July 31, 2003Applicant: Agere Systems Inc.Inventors: Yuanning Chen, Sundar Srinivasan Chetlur, Pradip Kumar Roy
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Publication number: 20030119337Abstract: A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.Type: ApplicationFiled: December 11, 2002Publication date: June 26, 2003Applicant: Agere Systems Inc.Inventors: Yuanning Chen, Sundar Srinivasan Chetlur, Pradip Kumar Roy
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Patent number: 6576522Abstract: A method for deuterium sintering to improve the hot carrier aging of an integrated circuit includes (a) providing a partially fabricated integrated circuit structure comprising a semiconductor substrate and a dielectric layer formed on at least a portion of the substrate, the dielectric layer having at least one conductive material via plug formed therein and (b) sintering the structure in the presence of a gas comprising deuterium-containing components at high temperatures prior to a metallization layer being deposited on the structure.Type: GrantFiled: December 8, 2000Date of Patent: June 10, 2003Assignee: Agere Systems Inc.Inventors: Sundar Srinivasan Chetlur, Pradip Kumar Roy, Minesh Amrat Patel, Sidhartha Sen, Vivek Saxena
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Patent number: 6551946Abstract: A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.Type: GrantFiled: June 20, 2000Date of Patent: April 22, 2003Assignee: Agere Systems Inc.Inventors: Yuanning Chen, Sundar Srinivasan Chetlur, Pradip Kumar Roy
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Patent number: 6535014Abstract: A tester for a circuit path includes a voltage controlled oscillator (VCO) for generating a controllable frequency oscillating test signal and having a controllable amplitude defined between first and second voltages, a multiplexer for selectively connecting one of the oscillating test signal, the first voltage, and the second voltage to the circuit path, and a selector for selectively connecting the multiplexer to the circuit path. Moreover, at least one of the first and second voltages may be controllable so that the VCO generates the oscillating test signal to selectively have one of an amplitude greater than, less than, and equal to an amplitude of an output of the circuit path. The circuit path may include a plurality of electronic circuit devices connected together.Type: GrantFiled: January 8, 2001Date of Patent: March 18, 2003Assignee: Lucent Technologies, Inc.Inventors: Sundar Srinivasan Chetlur, Pradip Kumar Roy
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Patent number: 6492712Abstract: An oxide for use in integrated circuits is substantially stress-free both in the bulk and at the interface between the substrate and the oxide. The interface is planar and has a low interface trap density (Nit). The oxide has a low defect density and may have a thickness of less than 1.5 nm or less.Type: GrantFiled: June 20, 2000Date of Patent: December 10, 2002Assignee: Agere Systems Guardian Corp.Inventors: Yuanning Chen, Sundar Srinivasan Chetlur, Sailesh Mansinh Merchant, Pradip Kumar Roy
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Publication number: 20020072187Abstract: A method for deuterium sintering to improve the hot carrier aging of an integrated circuit includes (a) providing a partially fabricated integrated circuit structure comprising a semiconductor substrate and a dielectric layer formed on at least a portion of the substrate, the dielectric layer having at least one conductive material via plug formed therein and (b) sintering the structure in the presence of a gas comprising deuterium-containing components at high temperatures prior to a metallization layer being deposited on the structure.Type: ApplicationFiled: December 8, 2000Publication date: June 13, 2002Inventors: Sundar Srinivasan Chetlur, Pradip Kumar Roy, Minesh Amrat Patel, Sidhartha Sen, Vivek Saxena
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Publication number: 20020000824Abstract: A tester for a circuit path includes a voltage controlled oscillator (VCO) for generating a controllable frequency oscillating test signal and having a controllable amplitude defined between first and second voltages, a multiplexer for selectively connecting one of the oscillating test signal, the first voltage, and the second voltage to the circuit path, and a selector for selectively connecting the multiplexer to the circuit path. Moreover, at least one of the first and second voltages may be controllable so that the VCO generates the oscillating test signal to selectively have one of an amplitude greater than, less than, and equal to an amplitude of an output of the circuit path. The circuit path may include a plurality of electronic circuit devices connected together.Type: ApplicationFiled: January 8, 2001Publication date: January 3, 2002Applicant: Lucent Technologies Inc.Inventors: Sundar Srinivasan Chetlur, Pradip Kumar Roy
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Patent number: 6291848Abstract: An integrated circuit capacitor includes a substrate, a first dielectric layer adjacent the substrate and having a first trench therein, and a first metal plug extending upwardly into the first trench. An interconnection line overlies the first trench and contacts the first metal plug to define anchoring recesses on opposite sides of the first metal plug. A second dielectric layer is on the interconnection line and has a second trench therein. A second metal plug extends upwardly into the second trench. More particularly, the second metal plug includes a body portion extending upwardly into the second trench, and anchor portions connected to the body portion and engaging the anchoring recesses to anchor the second metal plug to the interconnection line. Because the second metal plug is anchored, a depth of the second trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line.Type: GrantFiled: July 30, 1999Date of Patent: September 18, 2001Assignee: Agere Systems Guardian Corp.Inventors: Sundar Srinivasan Chetlur, James Theodore Clemens, Sailesh Mansinh Merchant, Pradip Kumar Roy, Hem M. Vaidya
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Patent number: 6249016Abstract: An integrated circuit capacitor includes a first dielectric layer adjacent a substrate and having a trench therein, and a metal plug comprising an upper portion extending upwardly into the trench, and a lower portion disposed in the first dielectric layer. The lower portion has a tapered width which increases in a direction toward the substrate to thereby secure the metal plug in the dielectric layer. Preferably, the upper portion is also tapered. Furthermore, a second dielectric layer is adjacent the metal plug with an upper electrode thereon.Type: GrantFiled: July 30, 1999Date of Patent: June 19, 2001Assignee: Agere Systems Guardian Corp.Inventors: Samir Chaudhry, Sundar Srinivasan Chetlur, Nace Layadi, Pradip Kumar Roy, Hem M. Vaidya
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Patent number: 6204186Abstract: A method of making a capacitor includes the steps of forming an interconnection line above a substrate, depositing a first dielectric layer on the interconnection line, and etching a via in the first dielectric layer. The via has a tapered width which increases in a direction toward the substrate. Further, the method includes filling the via with a conductive metal to form a metal plug, and etching a trench in the first dielectric layer around an upper portion of the metal plug. The metal plug has a tapered width which secures it into the dielectric layer. A second dielectric layer is deposited adjacent the metal plug and an upper electrode is deposited on the second dielectric layer. Preferably, a lower electrode is deposited to line the trench and contact the metal plug.Type: GrantFiled: July 30, 1999Date of Patent: March 20, 2001Assignee: Lucent Technologies Inc.Inventors: Samir Chaudhry, Sundar Srinivasan Chetlur, Nace Layadi, Pradip Kumar Roy, Hem M. Vaidya
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Patent number: 6103586Abstract: A method for making an integrated circuit capacitor includes forming a first dielectric layer adjacent a substrate, forming a first opening in the first dielectric layer, filling the first opening with a conductive material to define a first metal plug, and forming a trench in the first dielectric layer adjacent the first metal plug. An interconnection line lines the first trench and contacts the first metal plug to define anchoring recesses on opposite sides of the first metal plug. The method further includes forming a second dielectric layer on the interconnection line, forming a second opening in the second dielectric layer, and filling the second opening with a conductive metal to define a second metal plug having a body portion and anchor portions extending downward from the body portion for engaging the anchoring recesses to anchor the second metal plug. A second trench is formed in the second dielectric layer adjacent the second metal plug, and is aligned with the first trench.Type: GrantFiled: July 30, 1999Date of Patent: August 15, 2000Assignee: Lucent Technologies Inc.Inventors: Sundar Srinivasan Chetlur, James Theodore Clemens, Sailesh Mansinh Merchant, Pradip Kumar Roy, Hem M. Vaidya