Abstract: Embodiments of the present disclosure provide a level shifter, including: first and second NMOS transistors, wherein the sources of the first and second NMOS transistors are coupled to a first voltage, the gate of the first NMOS transistor is connected to an inverse of an input signal that varies between a second voltage and a third voltage, and wherein the gate of the second NMOS transistor receives a buffer of the input signal. a breakdown protection circuit has third and fourth NMOS transistors, the gates of the third and fourth NMOS transistors being connected to the third voltage, the drain of the first NMOS transistor being connected to the source of the third NMOS transistor, and the drain of the second NMOS transistor being connected to the source of the fourth NMOS transistor. A pull-up circuit is connected to the drains of the third and fourth NMOS transistors.