Abstract: The present invention relates to a clamping apparatus for an antenna device, and particularly, to a clamping apparatus including a rotation unit configured to rotate an antenna device in a horizontal direction, a tilting unit configured to rotate the antenna device in a vertical direction, and a connection arm configured to install at least one of the rotation unit and the tilting unit on a support pole so that the support pole is not positioned on a horizontal rotation path and a vertical rotation path of the antenna device, thereby reducing an installation space for an antenna device with respect to the support pole.

Abstract: A simulation method and a simulation apparatus of roll press for secondary battery production are provided.

Abstract: An antibacterial composition according to an exemplary embodiment of the present technology comprises one or more compounds comprising a quaternary ammonium structure having an acrylate group or a methacrylate group, in which a critical micelle concentration of the compound comprising the quaternary ammonium structure is 0.1 wt % to 3 wt %.

Abstract: An active noise control system selects one reference sensor providing a reference signal with the largest coherence to a noise signal, among a plurality of available reference sensors, as a first entry of a reference sensor set. After selecting the first entry, the active noise control system repeats a process in which a sensor capable of providing the largest information quantity to a current reference sensor set among remaining sensors is selected as a new entry of a reference sensor set, until a desired number of sensors is reached or a desired control level is reached. When the reference sensor set is determined, the active noise control system utilizes the entries of the reference sensor set to generates a noise control signal suitable for canceling the noise signal.

Abstract: A simulation apparatus and a simulation method of mixer for secondary battery production are provided. The simulation apparatus includes a memory configured to store at least one instruction; and at least one processor configured to execute the at least one instruction stored in the memory.

Abstract: A remote controller, a remote-control system and a control method thereof are provided. The remote controller includes a motion sensing circuit and a wireless communication circuit electrically connected to the motion sensing circuit. The motion sensing circuit determines whether or not a motion of the remote controller complies with one of multiple reference motions. When the motion of the remote controller complies with one of the reference motions, the wireless communication circuit is switched from a sleep state to a working state. The wireless communication circuit that is in the working state determines whether or not a received signal strength indication between the remote controller and a controlled device is greater than or equal to a strength threshold. When the received signal strength indication is less than the strength threshold, the wireless communication circuit is switched from the working state to the sleep state.

Abstract: Disclosed is a method for pre-detecting a defective porous polymer substrate for a separator, including selecting a porous polymer substrate having a plurality of pores; observing the selected porous polymer substrate with a scanning electron microscope (SEM) to obtain an image of the porous polymer substrate; quantifying the average value of pore distribution index (PDI); correcting the quantified average value of pore distribution index to obtain the corrected average value of pore distribution index; determining whether or not the corrected average value of pore distribution index is 60 a.u. (arbitrary unit) or less; and classifying the porous polymer substrate as a good product, when the corrected average value of pore distribution index is determined to be 60 a.u. or less, and classifying the porous polymer substrate as a defective product, when the corrected average value of pore distribution index is determined to be larger than 60 a.u.

Abstract: A plated steel wire, according to one aspect of the present invention, comprises: a base steel wire; and a zinc alloy plated layer. The zinc alloy plated layer comprises, in percentage by weight: 1.0% to 3.0% of AI; 1.0% to 2.0% of Mg; 0.5% to 5.0% of Fe; and the balance being Zn and unavoidable impurities, and includes a Zn/MgZn2/AI ternary eutectic structure, a Zn single-phase structure, and an Fe—Zn-AI-based crystal structure, wherein the Fe—Zn-AI-based crystal structure is formed adjacent to the base steel wire, and can have an average thickness of ? to ½ with respect to an average thickness of the zinc alloy plated layer.

Abstract: Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process are described. For example, an integrated circuit structure includes a fin or nanowire. A gate stack is over the fin or nanowire. The gate stack includes a gate dielectric and a gate electrode. A first dielectric spacer is along a first side of the gate stack, and a second dielectric spacer is along a second side of the gate stack. The first and second dielectric spacers are over at least a portion of the fin or nanowire. An insulating material is vertically between and in contact with the portion of the fin or nanowire and the first and second dielectric spacers. A first epitaxial source or drain structure is at the first side of the gate stack, and a second epitaxial source or drain structure is at the second side of the gate stack.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.

Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support plate for supporting a substrate and applying a power; a plasma control unit placed above the support plate to face the support plate; and a top electrode unit positioned to surround the plasma control unit, and wherein the plasma control unit includes: a dielectric plate positioned to face a top surface of a substrate mounted on the support plate; and a metal plate positioned above the dielectric plate, and the metal plate is electrically connected to the top electrode unit.

Abstract: An infusion flow regulator includes: a main body having an inlet through which fluid is introduced and an outlet through which the fluid is discharged; and a rotary dial rotatably coupled to the main body, with a sealing member interposed therebetween, so as to regulate a flow rate of the fluid, in which the rotary dial includes a regulating flow path having a shape of a recessed groove in cross section with a first width and a first height, and the regulating flow path includes a first region in which the first width is constant and the first height is decreased, and a second region in which both the first width and the first height are decreased. By the aforementioned configuration, the infusion flow regulator for the fluid can accurately regulate the flow rate even in a region where the flow rate of the fluid is very small.

Abstract: A semiconductor package may include a lower structure, a first semiconductor chip on the lower structure, the first semiconductor chip including a hot spot, a second semiconductor chip horizontally spaced apart from the first semiconductor chip on the lower structure, and a connection chip in the lower structure and connecting the first and second semiconductor chips to each other. The hot spot may vertically overlap the connection chip.

Abstract: A storage device includes a printed circuit board (PCB) with attached semiconductor chips, each including a memory, and with at least one wire coupling the plural semiconductor chips, and a breathable case surrounding a top portion and a bottom portion of the printed circuit board. The breathable case includes a first layer disposed on a second layer which is exposed to the printed circuit board. The second layer has smaller pores than the first layer.

Abstract: The present disclosure relates to a simulation apparatus for secondary battery production.

Abstract: Provided is a marker composition for predicting the prognosis of cancer and a method for predicting the prognosis of cancer using same and, more particularly, to a marker composition for predicting the prognosis of cancer comprising an agent for measuring an expression level of mRNA or protein thereof of at least one gene selected from the group consisting of ESR1, BEST1, ACTA2, HIPK2, IGSF9, ASCC2, JUN, PPP2R5A, SMAD3, CREBBP, EP300, and DDX5, to a method for predicting the prognosis of cancer using same, and to a method for providing information for determining a strategy for treating cancer.

Abstract: A display device includes a display panel including a plurality of pixels, a display panel driver, and a zone compensating circuit which divides the display panel into a plurality of unit blocks, obtains load values of input image data for the unit blocks, and generates corrected image data by correcting the input image data based on the load values. Each of the load values corresponds to one of the unit blocks. The display panel driver generates a data signal for displaying an image on the display panel based on the corrected image data. When grayscale values included in the input image data are the same, a luminance of the image displayed on the display panel is decreased moving away from a center of a reference block having a largest load value among the unit blocks based on the corrected image data.