Abstract: A method for processing a substrate includes: loading a substrate in a processing space of a vessel; drying the substrate using a supercritical fluid of a first temperature in the processing space, and thermally decomposing a contamination source disposed in the processing space by transferring heat to the processing space by using a non-reactive fluid of a second temperature that is higher than the first temperature.

Abstract: A method for processing a substrate includes: loading a substrate in a processing space of a vessel; drying the substrate using a supercritical fluid of a first temperature in the processing space, and thermally decomposing a contamination source disposed in the processing space by transferring heat to the processing space by using a non-reactive fluid of a second temperature that is higher than the first temperature.

Abstract: The present invention relates to an apparatus for cleaning a semiconductor substrate. The apparatus has a chamber including a treating room and a drying room located on an upper portion of the treating room. A supply pipe and an exhaust pipe are provided in the drying room. The supply pipe supplies isopropyl alcohol. In the exhaust pipe, a fluid in the drying room is exhausted. The exhaust pipe is arranged at both sides of the drying room in parallel to an arrangement direction of wafers. A plurality of exhaust ports are formed in each of exhaust pipes.