Abstract: Provided is an electronic apparatus and a method thereof. The method includes identifying pickup item information, identifying at least one storage place corresponding to the pickup item information among a plurality of storage places in the item storage center based on information on or regarding an item group located at each of the plurality of storage places, and providing information on the identified storage place and the pickup item information to a manager terminal, wherein the item group comprises at least one same item corresponding to an item group, and at least a portion of a plurality of item groups comprising a same item are stored in different storage places in the item storage center.

Abstract: Various arrangements of smart home devices are presented herein. A chassis assembly of a smart home device may define one or more compartments. The chassis assembly may include a plurality of cover fasteners. A rotatable cover assembly may be present and configured to be removably attached with the plurality of cover fasteners to the chassis assembly in any rotational orientation and to at least partially cover a front of the chassis assembly. While the rotatable cover is removably attached with the plurality of cover fasteners, the rotatable cover assembly is configured to block access to the one or more compartments defined by the chassis assembly.

Abstract: Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source.

Abstract: Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source.