Abstract: Disclosed is a bulk block for manufacturing a prosthesis having high aesthetics and processability required for one-day dental prosthetic materials, which is a dental composite bulk block comprising a glass ceramic matrix and a polymer, wherein the glass ceramic matrix consists of an amorphous glass matrix and a crystalline phase dispersed in the glass matrix, the crystalline phase comprises as a main crystalline phase at least one selected from a leucite crystalline phase and a lithium disilicate crystalline phase, and has an average particle diameter of 0.01-1.0 ?m, and the polymer is included in an amount of 20-40 wt % with respect to the weight of the total bulk block. The bulk block has the advantages of improved mechanical properties, being capable of preventing microleakage, exhibiting excellent aesthetics, and enabling machining.

Abstract: Discussed is a display device including a display panel, first gate lines located on the display panel, second gate lines separated from the first gate lines and located on the display panel, first data lines provided on the display panel corresponding to a first display area to cross the first gate lines and defining first pixel areas configuring the first display area, second data lines provided on the display panel corresponding to a second display area to cross the second gate lines and second pixel areas configuring the second display area, wherein the first pixel areas and the second pixel areas have the same size, and wherein a separation area is interposed between the first gate lines and the second gate lines, and a width of the separation area is equal to or wider than a width of a thin film transistor.

Abstract: Discussed is a display device including a display panel, first gate lines located on the display panel, second gate lines separated from the first gate lines and located on the display panel, first data lines provided on the display panel corresponding to a first display area to cross the first gate lines and defining first pixel areas configuring the first display area, second data lines provided on the display panel corresponding to a second display area to cross the second gate lines and second pixel areas configuring the second display area, wherein the first pixel areas and the second pixel areas have the same size, and wherein a separation area is interposed between the first gate lines and the second gate lines, and a width of the separation area is equal to or wider than a width of a thin film transistor.

Abstract: A display device in one embodiment includes a display panel configured to display an image in first and second display areas, a plurality of first gate lines corresponding to the first display area, and a plurality of second gate lines separated from the first gate lines and corresponding to the second display area. Accordingly, the distance between the first gate lines of the first display area and the second gate lines of the second display area is maximized to prevent static electricity from occurring between the electrodes, thereby increasing product yield.

Abstract: A display device in one embodiment includes a display panel configured to display an image in first and second display areas, a plurality of first gate lines corresponding to the first display area, and a plurality of second gate lines separated from the first gate lines and corresponding to the second display area. Accordingly, the distance between the first gate lines of the first display area and the second gate lines of the second display area is maximized to prevent static electricity from occurring between the electrodes, thereby increasing product yield.

Abstract: A thin film transistor array substrate for a digital photo-detector is provided. The photo-detector includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; a thin film transistor at each intersection between the gate lines and the data lines to output a photoelectric conversion signal from the photodiode to the data lines in response to a scan signal supplied by the gate lines; and a light-shielding layer over each channel region of the respective thin film transistors. Each light-shielding layer is electrically connected to the respective gate line.

Abstract: A thin film transistor array substrate for a digital photo-detector is provided. The thin film transistor array substrate includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; and a thin film transistor at each intersection between the gate lines and the data lines to turn on according to the scan signal of the gate lines and output the photoelectric conversion signal from the photodiode to the data lines. A contact area between a source electrode of the thin film transistor and a first electrode of the photodiode is at a portion outside an area covered by a photodiode region.

Abstract: A thin film transistor array substrate for a digital photo-detector is provided. The photo-detector includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; a thin film transistor at each intersection between the gate lines and the data lines to output a photoelectric conversion signal from the photodiode to the data lines in response to a scan signal supplied by the gate lines; and a light-shielding layer over each channel region of the respective thin film transistors. Each light-shielding layer is electrically connected to the respective gate line.

Abstract: A thin film transistor array substrate for a digital photo-detector is provided. The photo-detector includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; a thin film transistor at each intersection between the gate lines and the data lines to output a photoelectric conversion signal from the photodiode to the data lines in response to a scan signal supplied by the gate lines; and a light-shielding layer over each channel region of the respective thin film transistors. Each light-shielding layer is electrically connected to the respective gate line.

Abstract: A thin film transistor array substrate for a digital photo-detector is provided. The thin film transistor array substrate includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; and a thin film transistor at each intersection between the gate lines and the data lines to turn on according to the scan signal of the gate lines and output the photoelectric conversion signal from the photodiode to the data lines. A contact area between a source electrode of the thin film transistor and a first electrode of the photodiode is at a portion outside an area covered by a photodiode region.