Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

Abstract: A connector assembly includes a cap housing with a first fastener, a plug, and a position assurance member coupled to the plug and the cap housing. The plug includes a first end portion to be inserted into the cap housing, a plug-side flange protruding from an outer side of the plug, and a second fastener to be fastened to the first fastener. A first end portion of the cap housing is inserted into the plug-side flange. The position assurance member has a coupling flange into which a second end portion of the plug and a second end portion of the cap housing are inserted.