Abstract: A semiconductor device includes a substrate including an upper surface and a lower surface that are opposite to each other in a first direction, an active pattern which is on the upper surface of the substrate and extends in a second direction, a gate electrode which is on the active pattern and extends in a third direction, a first source/drain pattern which is connected to the active pattern on the upper surface of the substrate, and includes a lower epitaxial region and an upper epitaxial region, the upper epitaxial region including an epitaxial recess, and the lower epitaxial region being inside the epitaxial recess, a first source/drain contact, which is connected to the first source/drain pattern and extends into the substrate, and a contact silicide layer, which is between the first source/drain contact and the first source/drain pattern and contacts the lower epitaxial region.

Abstract: A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.

Abstract: A method of producing a thin film heating element is provided which can be used in manufacturing a transparent thin film heating element of desired shape with an increased heat emission property and an excellent durability. Also provided is a heating device of the type incorporating the thin film heating element produced by this method. The inventive method comprises the steps of, applying heat- and oil-resistant ink on a predetermined surface area of a base element, allowing the ink to run dry, spraying conductive chemical composition on the base element to form a conductive thin heater film, removing the ink out of the base element, printing a thin film electrode leading to the thin heater film, and baking the base element into a thin film heating element.

Abstract: A method of producing a thin film heating element is provided which can be used in manufacturing a transparent thin film heating element of desired shape with an increased heat emission property and an excellent durability. Also provided is a heating device of the type incorporating the thin film heating element produced by this method. The inventive method comprises the steps of, applying heat- and oil-resistant ink on a predetermined surface area of a base element, allowing the ink to run dry, spraying conductive chemical composition on the base element to form a conductive thin heater film, removing the ink out of the base element, printing a thin film electrode leading to the thin heater film, and baking the base element into a thin film heating element.

Abstract: A discharge device and an apparatus for generating plasma gas employing the same are disclosed. The discharge device enables a discharge phenomenon to occur between a dish-shaped electrode arranged inside an electrical bulb and a plate electrode located outside of the electrical bulb. And the apparatus for generating the plasma gas utilizes the discharge device to efficiently produce the plasma gas. The discharge device for generating discharge between electrodes by applying a predetermined high voltage therebetween, comprises, at least one bulb containing at least one dish-shaped electrode therein; and at least one plate electrode having at least one hole through which the bulb is inserted, and located coplanar with the dish-shaped electrode. In the case that a plurality of dish-shaped electrodes and a plurality of plate electrodes are provided, a sufficient amount of plasma gas which are used in the wastewater treatment system.