Patents by Inventor Sung-Dtr Wu

Sung-Dtr Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a resistor to replace a N-well resistor
    Patent number: 6713362
    Abstract: The present invention relates to a method for forming a non-salicide p+ polysilicon resistor used to replace a N-well resistor. In the low power SRAM process whose window is lower than 0.15 &mgr;m, it is found that non-salicide p+ polysilicon resistor has minor temperature dependence and also has layout benefit. In addition, the non-salicide p+ polysilicon resistor is decreased at high temperature. Therefore, it is good benefit to reduce the RC timing delay, which would compensate the inherent MOS mobility deceleration at high temperature, when the non-salicide p+ polysilicon resistor of the present invention is used to replace the N-well resistor.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: March 30, 2004
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Hung Chen, Sung-Dtr Wu