Abstract: There is provided a method of cleaning a film forming apparatus conducted after a film forming process by supplying a source gas and a reaction gas to produce a reaction product into a processing container to form a film of the reaction product on a substrate. The method includes: controlling, in the film forming process, a first film deposited in the processing container and a second film deposited in a source gas supply part to become different kinds of films; performing, after the film forming process, a cleaning process by supplying a cleaning gas having an etching selection ratio of the second film to the first film being greater than 1 so as to etch and remove the second film; and performing, after the cleaning process, a surface control process of making a surface state of the first film close to a state before the cleaning process was performed.

Abstract: A gas introduction structure for supplying a processing gas into a vertically-elongated processing container, includes a processing gas supply pipe extending along a longitudinal direction of the processing container in the processing container and having a plurality of gas discharge holes formed along the longitudinal direction, the processing gas supply pipe configured so that the processing gas is introduced from one end toward the other end thereof, wherein a dilution gas is supplied to a portion of the processing gas supply pipe that is closer to the other end than the one end of the processing gas supply pipe.

Abstract: With respect to a boat transfer method for transferring a boat holding a substrate into a processing chamber, the boat transfer method includes supplying a reducing gas into the processing chamber, and transferring the boat into the processing chamber in a state in which the reducing gas is present within the processing chamber.

Abstract: A substrate processing apparatus includes a processing chamber configured to accommodate a substrate, an injector, including a first connection port and a second connection port, wherein an inside of the injector communicates with an inside of the processing chamber, an exhaust pipe configured to exhaust the inside of the processing chamber, a source gas introducing pipe, connected to the first connection port, and configured to introduce a source gas into the injector, a cleaning gas introducing pipe configured to introduce a cleaning gas into the injector through one of the first connection port and the second connection port, and a vent pipe, connecting the exhaust pipe and the other of the first connection port and the second connection port, and configured to exhaust the inside of the injector.

Abstract: A gas introduction structure for supplying a processing gas into a vertically-elongated processing container, includes a processing gas supply pipe extending along a longitudinal direction of the processing container in the processing container and having a plurality of gas discharge holes formed along the longitudinal direction, the processing gas supply pipe configured so that the processing gas is introduced from one end toward the other end thereof, wherein a dilution gas is supplied to a portion of the processing gas supply pipe that is closer to the other end than the one end of the processing gas supply pipe.

Abstract: There is provided a method of cleaning a film forming apparatus conducted after a film forming process by supplying a source gas and a reaction gas to produce a reaction product into a processing container to form a film of the reaction product on a substrate. The method includes: controlling, in the film forming process, a first film deposited in the processing container and a second film deposited in a source gas supply part to become different kinds of films; performing, after the film forming process, a cleaning process by supplying a cleaning gas having an etching selection ratio of the second film to the first film being greater than 1 so as to etch and remove the second film; and performing, after the cleaning process, a surface control process of making a surface state of the first film close to a state before the cleaning process was performed.

Abstract: The method of forming a silicon oxycarbonitride film on a base includes stacking a silicon carbonitride film and a silicon oxynitride film on the base to form the silicon oxycarbonitride film.