Abstract: A disclosed polymer thin film includes a cationic polymer having a hydrolyzable side chain. The polymer thin film has a surface potential of 1 mV to 50 mV. A hydrolysis efficiency of the cationic polymer is 30% or more after reaction at 50° C. for one hour. The cationic polymer is dissolved to three-dimensionally capture nucleic acids, and releases the nucleic acids through hydrolysis. Thus, nucleic acid capturing-releasing efficiency can be improved.

Abstract: Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

Abstract: The present disclosure relates to a method for preparing a metal catalyst deposited with a layer film by ALD process and a metal catalyst thereof. More specifically, the present disclosure is intended to inhibit sintering of catalyst particles to prevent activity decrease, thus stably maintaining high activity, and simultaneously, providing heat stability, by layer-by-layer deposition of a layer film with alternation of different inorganic films on the surface of a metal catalyst in an ALD process.

Abstract: Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

Abstract: A method for producing a metal catalyst having an inorganic film deposited thereon by means of an atomic layer deposition (ALD) process, and a metal catalyst according to the method are disclosed. More specifically, the method includes a step of inducing selective adsorption of reactants to a portion having a low coordination number on the surface of the catalyst in the ALD process, thereby being intended to induce interaction between the catalyst and an inorganic film layer and maximally secure active sites of the catalyst.

Abstract: Provided are a device for a digital assay of targets according to an exemplary embodiment of the present disclosure and a method using the same. The digital assay method of targets according to the exemplary embodiment of the present disclosure includes acquiring an image for a plurality of microdroplets, predicting at least one region based on the image for the plurality of microdroplets using an artificial neural network-based prediction model configured to segment at least one region among positive microdroplets, negative microdroplets, and atypical microdroplets, with the image for the plurality of microdroplets as an input, determining a number for the plurality of microdroplets based on the at least one region, and providing quantitative data of targets based on the number for the plurality of microdroplets.

Abstract: A highly stretchable superhydrophobic thin film using initiated chemical vapor deposition is prepared by a method in which a substrate is coated with a copolymer at a nanometer thickness by allowing a fluorine monomer containing 4 to 6 fluoroalkyl groups and having a glass transition temperature of 5° C. or less to react with a crosslinking monomer on the substrate in the presence of an initiator in an initiated chemical vapor deposition reactor and thus its durability can be secured in foldable and wearable devices.

Abstract: The present invention relates to a method of preparing a polymer film using chemical vapor deposition using sulfur as an initiator (sCVD) capable of manufacturing a polymer film through polymerization of sulfur and a monomer using gas-phase sulfur as an initiator. In the manufactured polymer film, any of various monomers and sulfur can be polymerized into a copolymer, and it is possible to manufacture a polymer film having a high content of sulfur, an excellent refractive index, and excellent transmittance.

Abstract: Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

Abstract: The present invention relates to a method or kit for producing cancer stem cell spheroids, and a method of screening of drugs for treating cancer cell resistance using the prepared cancer stem cell spheroid, and it can conveniently produce cancer stem cell spheroids, and the prepared cancer stem cell spheroids can be effectively utilized for screening drugs for treating cancer cell resistance.

Abstract: Provided is a thin-film transistor containing source, drain and gate electrodes, which contains: a channel layer containing a two-dimensional material; a gate insulator formed on the channel layer; and a gate electrode formed on the gate insulator, wherein the gate insulator contains at least two insulators having different dielectric constants.

Abstract: Provided are methods of sealing open pores of a surface of a porous dielectric material using an initiated chemical vapor deposition (iCVD) process. In one example method of sealing open pores, since the polymer thin film having a significantly thin thickness may be formed by a solvent-free vapor deposition method without plasma treatment, it is possible to minimize deterioration of characteristics of the dielectric material vulnerable to plasma and a chemical solution.

Abstract: The present invention provides a culture plate comprising a copolymer formed from a first monomer for forming a thin film having high surface free energy and a second monomer for forming a thin film having low surface free energy, a method for producing the culture plate, and a method for producing and transferring a cell aggregate in the form of a cell sheet by using the culture plate. The present invention has the effect of producing a cell aggregate in the form of a cell sheet through an easy and simple process in comparison with prior art.

Abstract: Provided are a method of locally sealing only pores present in a surface part of a porous dielectric material by forming a polymer thin film through an initiated chemical vapor deposition (iCVD) method using an initiator, and a method of minimizing an increase in a dielectric constant induced therefrom.

Abstract: Provided are methods of sealing open pores of a surface of a porous dielectric material using an initiated chemical vapor deposition (iCVD) process. In one example method of sealing open pores, since the polymer thin film having a significantly thin thickness may be formed by a solvent-free vapor deposition method without plasma treatment, it is possible to minimize deterioration of characteristics of the dielectric material vulnerable to plasma and a chemical solution.

Abstract: The present invention provides a cell culture substrate comprising a polymer formed of a cyclosiloxane compound and a manufacturing method therefor, and a method for preparing a cell spheroid type of cell aggregate or induced pluripotent stem cells using the cell culture substrate. The cell spheroid type of cell aggregate can be easily formed by culturing cells on the cell culture substrate of the present invention, and further, the cell culture substrate can be utilized as a cell culture platform for preparing the induced pluripotent stem cells.

Abstract: One aspect of the invention relates to a linker-free, one-step method of grafting polymer films onto organic substrates, and the films obtained by such a method. In certain embodiments, the grafted polymer films are conductive. In certain embodiments, said grafting method utilizes the ability for Friedel-Crafts catalyst to form radical cations from organic substrates. In one embodiment, the method provides poly-3,4-ethylenedioxythiophene (PEDOT) thin films grafted to organic substrates. In other embodiments, the method is applicable to the polymerization of other monomers to yield conducting polymers, such as polyanilines, polypyrroles, polyfurans, polythiophenes and their derivatives. Remarkably, the polymer films grafted by the inventive methods show enormous increases in adhesion strength. Further, in certain embodiments, polymer patterns were easily obtained using the inventive methods and soft lithography techniques.

Abstract: A method of preparing a material having a superhydrophobic region and a hydrophobic region is described, involving preparing a superhydrophobic surface body and hydrolyzing one surface of the prepared superhydrophobic surface body using a strong base. Such preparation method is simpler than conventional preparation methods and is capable of preparing a material having opposite surface characteristics at low costs.

Abstract: There are provided a printed circuit board and a manufacturing method thereof. The printed circuit board (PCB) includes an adhesive film disposed between an insulating layer and a circuit pattern, wherein the adhesive film includes poly(glycidyl methacrylate). The printed circuit board may include the adhesive film between the circuit pattern and the insulating layer, and thus, adhesive strength may be increased, while having a low roughness value, a fine circuit pattern may be formed, and reliability thereof may be enhanced.

Abstract: One aspect of the invention relates to a linker-free, one-step method of grafting polymer films onto organic substrates, and the films obtained by such a method. In certain embodiments, the grafted polymer films are conductive. In certain embodiments, said grafting method utilizes the ability for Friedel-Crafts catalyst to form radical cations from organic substrates. In one embodiment, the method provides poly-3,4-ethylenedioxythiophene (PEDOT) thin films grafted to organic substrates. In other embodiments, the method is applicable to the polymerization of other monomers to yield conducting polymers, such as polyanilines, polypyrroles, polyfurans, polythiophenes and their derivatives. Remarkably, the polymer films grafted by the inventive methods show enormous increases in adhesion strength. Further, in certain embodiments, polymer patterns were easily obtained using the inventive methods and soft lithography techniques.