Patents by Inventor Sung-Gi Ri

Sung-Gi Ri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High efficiency indirect transition semiconductor ultraviolet light emitting device
    Patent number: 8592824
    Abstract: Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.
    Type: Grant
    Filed: August 13, 2007
    Date of Patent: November 26, 2013
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Satoshi Yamasaki, Toshiharu Makino, Hideyo Ookushi, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Daisuke Takeuchi
  • High Efficiency Indirect Transition Semiconductor Ultraviolet Light Emitting Device
    Publication number: 20100001292
    Abstract: Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.
    Type: Application
    Filed: August 13, 2007
    Publication date: January 7, 2010
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE
    Inventors: Satoshi Yamasaki, Toshiharu Makino, Hideyo Ookushi, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Daisuke Takeuchi