Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A semiconductor package with improved thermal properties is provided. The semiconductor package includes a first package including a first die, an interposer on the first package and including a first area and a second area. A second package is on a top face of the interposer in the second area, and a thermal diffusion structure is on a top face of the interposer in the first area. The thermal diffusion structure is configured so that heat generated in the first die is discharged through the thermal diffusion structure.

Abstract: The present disclosure relates to a novel method for preparing apixaban. The method of the present disclosure is economical since no expensive reagents or solvents are used. In addition, the method is applicable to mass production on an industrial scale because it requires no special conditions or complicated processes and no hazardous reagents or solvents are used. Furthermore, because no toxic solvent is used in the final step of apixaban synthesis and in a purification process, high-purity apixaban can be prepared stably at high yield without the concern of residual solvents.

Abstract: The present invention relates to a flat display device and method of fabricating the same which can make narrow bezel design easy and minimize resistance variation between adjacent link lines for improving of a picture quality. The flat display device includes a display region having a plurality of pixels, a driving integrated circuit for forwarding driving signals for driving the plurality of pixels, and a plurality of link lines for transmitting the driving signals to the display region, wherein each of the plurality of link lines includes a first metal line, a second metal line formed on a layer different from the first metal line, and a contact portion for connecting the first and second metal lines to each other.

Abstract: A horizontal electric field-type liquid crystal display (LCD) device is provided. The LCD device includes first and second substrates disposed opposite and apart from each other, a first electrode formed on an inner surface of the first substrate, a second electrode corresponding to the first electrode and configured to generate an electric field, and a liquid crystal (LC) layer formed between the first and second substrates, the LC layer including a polymer network and LC molecules confined in multiple domains by the polymer network.

Abstract: A horizontal electric field-type liquid crystal display (LCD) device is provided. The LCD device includes first and second substrates disposed opposite and apart from each other, a first electrode formed on an inner surface of the first substrate, a second electrode corresponding to the first electrode and configured to generate an electric field, and a liquid crystal (LC) layer formed between the first and second substrates, the LC layer including a polymer network and LC molecules confined in multiple domains by the polymer network.

Abstract: The present invention relates to a flat display device and method of fabricating the same which can make narrow bezel design easy and minimize resistance variation between adjacent link lines for improving of a picture quality. The flat display device includes a display region having a plurality of pixels, a driving integrated circuit for forwarding driving signals for driving the plurality of pixels, and a plurality of link lines for transmitting the driving signals to the display region, wherein each of the plurality of link lines includes a first metal line, a second metal line formed on a layer different from the first metal line, and a contact portion for connecting the first and second metal lines to each other.

Abstract: A liquid crystal display device includes a substrate, a plurality of gate lines and a plurality of data lines on the substrate, a first insulation layer on the plurality of the gate lines, a plurality of gate link lines electrically connected to the gate lines, and a plurality of data link lines electrically connected to the data lines, the gate link lines and the data link lines being on the first insulation layer.

Abstract: A liquid crystal display device includes a first array cell having a first active region and a first pad region in a periphery of the first active region, wherein the first array cell includes a first gate line including first and second metal layers, a first data line crossing the first gate line to define a pixel region, a first switching device being near a crossing of the first gate line and the first data line and connected to the first gate line and the first data line, a first pixel electrode connected to the first switching device, a first gate pad electrode in the first pad region, a first gate link line extending from the first gate pad electrode and connected to the first gate line using a connection pattern; and a second array cell larger than the first array cell.

Abstract: An LCD device with improved an aperture ratio and decreased parasitic capacitance has a passivation layer of an inorganic material and which includes a gate line on a first substrate; a gate insulating layer on an entire surface of the first substrate including the gate line; a data line on the gate insulating layer in perpendicular to the gate line, to define a pixel region; a thin film transistor at a crossing portion of the gate and data lines; a passivation layer on the entire surface of the first substrate including the thin film transistor; a pixel electrode on the passivation layer, for being connected with a drain electrode of the thin film transistor; and a light-shielding metal for receiving a voltage, formed between the data line and the pixel electrode, to prevent a parasitic capacitance between the data line and the pixel electrode.

Abstract: An active matrix drive system drives an emissive display device such as an organic light-emitting diode display and is configured to measure sub-pixel current in the emissive display device. One or more power column power lines of the emissive display device are turned off while sub-pixel current is measured. As a result, the sub-pixel current is relative large compared to the background current of the emissive display device, which facilitates accurate measurement of the sub-pixel current.

Abstract: A liquid crystal display device includes a substrate, a plurality of gate lines and a plurality of data lines on the substrate, a first insulation layer on the plurality of the gate lines, a plurality of gate link lines electrically connected to the gate lines, and a plurality of data link lines electrically connected to the data lines, the gate link lines and the data link lines being on the first insulation layer.

Abstract: An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300° C. to 500° C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.

Abstract: A liquid crystal display having two display surfaces includes a first substrate supporting a first thin film transistor array and a first color filter array, and a second substrate supporting a second color filter array facing the first thin film transistor array and a second thin film transistor facing the first color filter array, and a layer of liquid crystal material provided between the first and second substrates.

Abstract: A liquid crystal display device includes a first array cell having a first active region and a first pad region in a periphery of the first active region, wherein the first array cell includes a first gate line including first and second metal layers, a first data line crossing the first gate line to define a pixel region, a first switching device being near a crossing of the first gate line and the first data line and connected to the first gate line and the first data line, a first pixel electrode connected to the first switching device, a first gate pad electrode in the first pad region, a first gate link line extending from the first gate pad electrode and connected to the first gate line using a connection pattern; and a second array cell larger than the first array cell.

Abstract: A method of fabricating a liquid crystal display which prevents breakage of a substrate in a thin liquid crystal display panel. The method includes forming a plurality of sealant patterns defining a liquid layer on a first substrate, a plurality of dummy patterns between the sealant patterns, and a plurality of protective patterns on crossings between the dummy patterns; bonding a second substrate to the first substrate, forming a plurality of scribing lines on a surface of either the first or second substrate; and cutting the first and second substrates along the scribing lines.

Abstract: A liquid crystal display device includes first and second substrates, a plurality of gate lines and data lines on the first substrate, a plurality of switching devices at cross portions of the gate and data lines, a passivation layer on the plurality of switching devices, a plurality of ball spacers on the passivation layer, a color filter layer on the second substrate, and a plurality of column spacers on the color filter layer.

Abstract: A liquid crystal display having two display surfaces includes a first substrate supporting a first thin film transistor array and a first color filter array, and a second substrate supporting a second color filter array facing the first thin film transistor array and a second thin film transistor facing the first color filter array, and a layer of liquid crystal material provided between the first and second substrates.

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas.

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.