Abstract: A method for fabricating a fine pattern in a photomask includes forming a light shielding layer over a substrate; forming a first resist layer pattern over the light shielding layer to expose the light shielding layer with a first critical dimension; forming a groove by etching the portion of the light shielding layer exposed by the first resist layer pattern to a first depth; exposing an upper surface of the light shielding layer by removing the first resist layer pattern; forming a second resist layer pattern over the exposed upper surface of the light shielding layer so that a bottom of the groove is partially exposed; and forming a light shielding layer pattern by etching the portion of the light shielding layer exposed by the second resist layer pattern to a second depth so that the substrate is exposed with a second critical dimension which is smaller than the first critical dimension.

Abstract: A mask for extreme ultra violet lithography (EUVL) and a method of fabricating the same, and a wafer exposure method using the same. According to a method of fabricating the mask, a light reflective layer pattern is formed on a transparent substrate to reflect extreme ultraviolet light. The extreme ultraviolet light is incident to and transmitted by the transparent substrate. A light absorption layer on the transparent substrate is formed to fill between the light reflective layer patterns and absorb the extreme ultraviolet light.

Abstract: A method for fabricating a fine pattern in a photomask includes forming a light shielding layer over a substrate; forming a first resist layer pattern over the light shielding layer to expose the light shielding layer with a first critical dimension; forming a groove by etching the portion of the light shielding layer exposed by the first resist layer pattern to a first depth; exposing an upper surface of the light shielding layer by removing the first resist layer pattern; forming a second resist layer pattern over the exposed upper surface of the light shielding layer so that a bottom of the groove is partially exposed; and forming a light shielding layer pattern by etching the portion of the light shielding layer exposed by the second resist layer pattern to a second depth so that the substrate is exposed with a second critical dimension which is smaller than the first critical dimension.

Abstract: A mask for extreme ultra violet lithography (EUVL) and a method of fabricating the same, and a wafer exposure method using the same. According to a method of fabricating the mask, a light reflective layer pattern is formed on a transparent substrate to reflect extreme ultraviolet light. The extreme ultraviolet light is incident to and transmitted by the transparent substrate. A light absorption layer on the transparent substrate is formed to fill between the light reflective layer patterns and absorb the extreme ultraviolet light.