Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Abstract: The present disclosure provides a semiconductor device package and a method of manufacturing the same. The semiconductor device package includes an encapsulant and a plurality of leads. The encapsulant has a first upper surface, a second upper surface, a first lateral surface and a second lateral surface. The first lateral surface extends between the first upper surface and the second upper surface, and the second upper surface extends between the first lateral surface and the second lateral surface. The leads are embedded in the encapsulant. One of the plurality of leads has a first surface exposed from the first upper surface of the encapsulant, a second surface exposed from the second upper surface of the encapsulant, a third surface extending between the first surface and the second surface, and a fourth surface extending from the third surface of the lead toward the first lateral surface of the encapsulant.

Abstract: A printed wiring board has an aluminum backing, a dielectric layer overlying the aluminum backing, and a copper layer overlying the dielectric layer. Holes are drilled through the copper and the dielectric layers, and either partially or fully through the aluminum backing, and plated to provide a conductive path between the copper layer and the aluminum backing. Tin-lead traces are applied to the upper surface of the copper layer and the copper layer is etched to define conductive paths. The copper exposed and aluminum exposed surfaces are protected so as to permit processing of the printed wiring board in otherwise-incompatible etchants and other solutions.

Abstract: A copper-tungsten or copper-molybdenum substrate is plated with a nickel/gold plating by first activating a surface of the substrate. In activating, the surface is contacted to a concentrated alkaline solution at elevated temperature, and then to a concentrated acidic solution. The surface is thereafter plated with a nickel strike layer, plated with a nickel primary layer overlying the nickel strike layer, sintered, re-activated in a concentrated acidic solution, plated with a nickel secondary layer overlying the nickel primary layer, and plated with a gold layer overlying the nickel secondary layer.

Abstract: Flow-inducing panels for use in electroless copper plating of complex plastic microwave assemblies. A panel comprises a rigid baffle having openings adapted to secure microwave assemblies therein. The panel has a size relative to the electroless copper plating tank that causes sufficient plating solution flow through the channels in the microwave assemblies by minimizing solution flow bypassing of the channels. This achieves complete copper plating of the inner surfaces in the channels. A relatively large panel builds up back pressure as it approaches plating tank walls, which creates a pressure differential as it moves through the plating tank, thus forcing solution through the channels. The flow-inducing panels easily hold many parts in a stabilized manner which yields high productivity, and provide solution flow through the channels using a standard metallization basket used for printed wiring board manufacturing.